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| Hauptseite > Publikationsdatenbank > Investigation of ternary nitride semiconductor alloys by scanning tunneling microscopy > print |
| Hauptseite > Publikationsdatenbank > Investigation of ternary nitride semiconductor alloys by scanning tunneling microscopy > print |
| 001 | 829939 | ||
| 005 | 20240610121332.0 | ||
| 020 | _ | _ | |a 978-3-95806-232-0 |
| 024 | 7 | _ | |a 2128/14654 |2 Handle |
| 024 | 7 | _ | |a 1866-1777 |2 ISSN |
| 037 | _ | _ | |a FZJ-2017-03543 |
| 041 | _ | _ | |a English |
| 041 | _ | _ | |a English |
| 100 | 1 | _ | |a Portz, Verena |b 0 |e Corresponding author |g female |0 P:(DE-Juel1)145975 |u fzj |
| 245 | _ | _ | |a Investigation of ternary nitride semiconductor alloys by scanning tunneling microscopy |f - 2017-02-20 |
| 260 | _ | _ | |a Jülich |c 2017 |b Forschungszentrum Jülich GmbH Zentralbibliothek, Verlag |
| 300 | _ | _ | |a 140 S. |
| 336 | 7 | _ | |a Output Types/Dissertation |2 DataCite |
| 336 | 7 | _ | |a Book |0 PUB:(DE-HGF)3 |2 PUB:(DE-HGF) |m book |
| 336 | 7 | _ | |a DISSERTATION |2 ORCID |
| 336 | 7 | _ | |a PHDTHESIS |2 BibTeX |
| 336 | 7 | _ | |a Thesis |0 2 |2 EndNote |
| 336 | 7 | _ | |a Dissertation / PhD Thesis |b phd |m phd |0 PUB:(DE-HGF)11 |s 1611310833_30306 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a doctoralThesis |2 DRIVER |
| 490 | 0 | _ | |a Schriften des Forschungszentrums Jülich. Reihe Information / Information |v 48 |
| 502 | _ | _ | |a Dissertation, RWTH Aachen, 2017 |c RWTH Aachen |b Dissertation |d 2017 |
| 520 | _ | _ | |a In this thesis different lattice-matched Al$_{1-x}$In$_{x}$N/GaN heterostructures were investigated with the aim to deduce strain, compositional fluctuations, defects, and electronic properties on cross-sectional $\textit{m}$-plane Al$_{1-x}$In$_{x}$N cleavage surfaces. The electronic properties of Al$_{1-x}$In$_{x}$N($10\overline{1}$0) surfaces were investigated by cross-sectional scanning tunneling spectroscopy in combination with density functional theory calculations. The calculations revealed empty Al and/or In-derived dangling bond states at the surface, which were calculated to be within the fundamental bulk band gap for In contents smaller than 60%. For In contents of ${x}$ = 0.19 and ${x}$ = 0.20, the energy of the lowest empty In-derived surface state was extracted from tunnel spectra acquired on Al$_{1-x}$In$_{x}$N($10\overline{1}0$) cleavage surfaces to be E$_{C}$ - 1-82 $\pm$ 0.41 eV and E$_{C}$ - 1.80 $\pm$ 0.56 eV, respectively, in good agreement with the calculated energies. In addition, a polarity dependent Fermi-level pinning of the surface state was identified. Based on these results it was concluded, that under growth conditions the Fermi level is pinned by the In-derived dangling bond state for In contents smaller than about 60%. For larger In contents no Fermi level pinning is present. In order to fit simulations to the experimentally obtained tunnel spectra, an average value of the electron affinity $_{\chi AllnN}$ of 3.5 $\pm$ 0.1 eV was necessary. A thorough literature survey of theoretically and experimentally obtained values of the electron affinities of GaN, AlN, and InN revealed two issues. First, a broad range of values was reported for the electron affinities with deviations of more than 50%. Second, [...] |
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