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@ARTICLE{Pan:829957,
      author       = {Pan, Chengbin and Ji, Yanfeng and Xiao, Na and Hui, Fei and
                      Tang, Kechao and Guo, Yuzheng and Xie, Xiaoming and Puglisi,
                      Francesco M. and Larcher, Luca and Miranda, Enrique and
                      Jiang, Lanlan and Shi, Yuanyuan and Valov, Ilia and
                      McIntyre, Paul C. and Waser, R. and Lanza, Mario},
      title        = {{C}oexistence of {G}rain-{B}oundaries-{A}ssisted {B}ipolar
                      and {T}hreshold {R}esistive {S}witching in {M}ultilayer
                      {H}exagonal {B}oron {N}itride},
      journal      = {Advanced functional materials},
      volume       = {27},
      number       = {10},
      issn         = {1616-301X},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2017-03561},
      pages        = {1604811 -},
      year         = {2017},
      abstract     = {The use of 2D materials to improve the capabilities of
                      electronic devices is a promising strategy that has recently
                      gained much interest in both academia and industry. However,
                      while the research in 2D metallic and semiconducting
                      materials is well established, detailed knowledge and
                      applications of 2D insulators are still scarce. In this
                      paper, the presence of resistive switching (RS) in
                      multilayer hexagonal boron nitride (h-BN) is studied using
                      different electrode materials, and a family of h-BN-based
                      resistive random access memories with tunable capabilities
                      is engineered. The devices show the coexistence of forming
                      free bipolar and threshold-type RS with low operation
                      voltages down to 0.4 V, high current on/off ratio up to 106,
                      and long retention times above 10 h, as well as low
                      variability. The RS is driven by the grain boundaries (GBs)
                      in the polycrystalline h-BN stack, which allow the
                      penetration of metallic ions from adjacent electrodes. This
                      reaction can be boosted by the generation of B vacancies,
                      which are more abundant at the GBs. To the best of our
                      knowledge, h-BN is the first 2D material showing the
                      coexistence of bipolar and threshold RS, which may open the
                      door to additional functionalities and applications.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000395717600006},
      doi          = {10.1002/adfm.201604811},
      url          = {https://juser.fz-juelich.de/record/829957},
}