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@ARTICLE{Bangert:830206,
      author       = {Bangert, U. and Stewart, A. and O’Connell, E. and
                      Courtney, E. and Ramasse, Q. and Kepaptsoglou, D. and
                      Hofsäss, H. and Amani, J. and Tu, J.-S. and Kardynal, B.},
      title        = {{I}on-beam modification of 2-{D} materials - single implant
                      atom analysis via annular dark-field electron microscopy},
      journal      = {Ultramicroscopy},
      volume       = {176},
      issn         = {0304-3991},
      address      = {Amsterdam},
      publisher    = {Elsevier Science},
      reportid     = {FZJ-2017-03780},
      pages        = {31 - 36},
      year         = {2017},
      abstract     = {Functionalisation of two-dimensional (2-D) materials via
                      low energy ion implantation could open possibilities for
                      fabrication of devices based on such materials. Nanoscale
                      patterning and/or electronically doping can thus be
                      achieved, compatible with large scale integrated
                      semiconductor technologies. Using atomic resolution High
                      Angle Annular Dark Field (HAADF) scanning transmission
                      electron microscopy supported by image simulation, we show
                      that sites and chemical nature of individual implants/
                      dopants in graphene, as well as impurities in hBN, can
                      uniquely and directly be identified on grounds of their
                      position and their image intensity in accordance with
                      predictions from Z-contrast theories. Dopants in graphene
                      (e.g., N) are predominantly substitutional. In other 2-Ds,
                      e.g. dichalcogenides, the situation is more complicated
                      since implants can be embedded in different layers and
                      substitute for different elements. Possible configurations
                      of Se-implants in MoS2 are discussed and image contrast
                      calculations performed. Implants substituting for S in the
                      top or bottom layer can undoubtedly be identified. We show,
                      for the first time, using HAADF contrast measurement that
                      successful Se-integration into MoS2 can be achieved via ion
                      implantation, and we demonstrate the possibility of HAADF
                      image contrast measurements for identifying impurities and
                      dopants introduced into in 2-Ds.},
      cin          = {PGI-9},
      ddc          = {570},
      cid          = {I:(DE-Juel1)PGI-9-20110106},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000403992200006},
      doi          = {10.1016/j.ultramic.2016.12.011},
      url          = {https://juser.fz-juelich.de/record/830206},
}