Conference Presentation (After Call) FZJ-2017-03781

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Doping Effects in Direct Bandgap GeSn Light Emitter

 ;  ;  ;  ;  ;  ;  ;  ;  ;

2016

ECS PRiME Meeting, HonoluluHonolulu, USA, 2 Oct 2016 - 7 Oct 20162016-10-022016-10-07


Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
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 Record created 2017-05-24, last modified 2021-01-29



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