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Conference Presentation (After Call) FZJ-2017-03788
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High Sn Content GeSn Light Emitters for Group IV Photonics

 ;  ;  ;  ;  ;  ;  ;  ;  ;  ;

2016

International SiGe Technology and Device Meeting, ISTDM, NagoyaNagoya, Japan, 7 Jun 2016 - 11 Jun 20162016-06-072016-06-11

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
Publications database
 Record created 2017-05-24, last modified 2021-01-29
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