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Conference Presentation (After Call) FZJ-2017-03791
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Epitaxy of SiGeSn ternaries for group IV light emitting diodes

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2016

E-MRS Spring Meeting, LilleLille, France, 2 May 2016 - 6 May 20162016-05-022016-05-06

Contributing Institute(s):
  1. Halbleiter-Nanoelektronik (PGI-9)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-9
Workflow collections > Public records
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 Record created 2017-05-24, last modified 2021-01-29
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