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@ARTICLE{Iacopetti:830260,
      author       = {Iacopetti, S. and Shekhter, P. and Winter, R. and Tromm, T.
                      C. U. and Schubert, J. and Eizenberg, M.},
      title        = {{T}he asymmetric band structure and electrical behavior of
                      the {G}d{S}c{O} 3 /{G}a{N} system},
      journal      = {Journal of applied physics},
      volume       = {121},
      number       = {20},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-03833},
      pages        = {205303 -},
      year         = {2017},
      abstract     = {III–V nitrides are interesting materials for a very wide
                      variety of electronic and optoelectronic devices. In this
                      study, their interaction with GdScO3 (GSO), a ternary rare
                      earth oxide, is investigated for MOS applications.We compare
                      pulsed laser deposited amorphous and crystalline epitaxial
                      GdScO3 in terms of their band alignment with the underlying
                      GaN substrate and the resulting electrical characteristics
                      of the MOS stack. The crystal structure of GdScO3 and GaN is
                      investigated by means of x-ray diffraction, showing that
                      crystalline oxide is growing epitaxially on GaN. X-ray
                      photoelectron spectroscopy analysis shows a staggered band
                      alignment with a GdScO3-GaN valence band offset of 3.6–3.7
                      eV, which is reflected in a very asymmetric current-voltage
                      behaviour of the MOS capacitors: breakdown at positive bias,
                      significantly earlier for the crystalline oxide (around
                      5MV/cm) compared to the amorphous oxide (around 8MV/cm), and
                      no breakdown up to a field of 14 MV/cm at negative bias.
                      Transmission electron microscopy images show a crystalline,
                      two-atom thick interface layer between GaN and both
                      crystalline and amorphous GdScO3, which is thought to be an
                      electron barrier between GSO and GaN and a possible source
                      of the staggered band alignment. The electrical behaviour
                      can be exploited for asymmetric nano-electronic devices.
                      Published by AIP Publishing.},
      cin          = {PGI-9 / JARA-FIT},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000404164200003},
      doi          = {10.1063/1.4983559},
      url          = {https://juser.fz-juelich.de/record/830260},
}