Gast ::
| Hauptseite > Publikationsdatenbank > The asymmetric band structure and electrical behavior of the GdScO 3 /GaN system > print |
| Hauptseite > Publikationsdatenbank > The asymmetric band structure and electrical behavior of the GdScO 3 /GaN system > print |
| 001 | 830260 | ||
| 005 | 20210129230448.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4983559 |2 doi |
| 024 | 7 | _ | |a 0021-8979 |2 ISSN |
| 024 | 7 | _ | |a 0148-6349 |2 ISSN |
| 024 | 7 | _ | |a 1089-7550 |2 ISSN |
| 024 | 7 | _ | |a 2128/14571 |2 Handle |
| 024 | 7 | _ | |a WOS:000404164200003 |2 WOS |
| 024 | 7 | _ | |a altmetric:20801597 |2 altmetric |
| 037 | _ | _ | |a FZJ-2017-03833 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Iacopetti, S. |0 P:(DE-HGF)0 |b 0 |e Corresponding author |
| 245 | _ | _ | |a The asymmetric band structure and electrical behavior of the GdScO 3 /GaN system |
| 260 | _ | _ | |a Melville, NY |c 2017 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1496228918_6361 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a III–V nitrides are interesting materials for a very wide variety of electronic and optoelectronic devices. In this study, their interaction with GdScO3 (GSO), a ternary rare earth oxide, is investigated for MOS applications.We compare pulsed laser deposited amorphous and crystalline epitaxial GdScO3 in terms of their band alignment with the underlying GaN substrate and the resulting electrical characteristics of the MOS stack. The crystal structure of GdScO3 and GaN is investigated by means of x-ray diffraction, showing that crystalline oxide is growing epitaxially on GaN. X-ray photoelectron spectroscopy analysis shows a staggered band alignment with a GdScO3-GaN valence band offset of 3.6–3.7 eV, which is reflected in a very asymmetric current-voltage behaviour of the MOS capacitors: breakdown at positive bias, significantly earlier for the crystalline oxide (around 5MV/cm) compared to the amorphous oxide (around 8MV/cm), and no breakdown up to a field of 14 MV/cm at negative bias. Transmission electron microscopy images show a crystalline, two-atom thick interface layer between GaN and both crystalline and amorphous GdScO3, which is thought to be an electron barrier between GSO and GaN and a possible source of the staggered band alignment. The electrical behaviour can be exploited for asymmetric nano-electronic devices. Published by AIP Publishing. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Shekhter, P. |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Winter, R. |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Tromm, T. C. U. |0 P:(DE-Juel1)165625 |b 3 |
| 700 | 1 | _ | |a Schubert, J. |0 P:(DE-Juel1)128631 |b 4 |
| 700 | 1 | _ | |a Eizenberg, M. |0 P:(DE-HGF)0 |b 5 |
| 773 | _ | _ | |a 10.1063/1.4983559 |g Vol. 121, no. 20, p. 205303 - |0 PERI:(DE-600)1476463-5 |n 20 |p 205303 - |t Journal of applied physics |v 121 |y 2017 |x 1089-7550 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |u https://juser.fz-juelich.de/record/830260/files/JAP-Sara-Pini-GSO-asymmetric%20bandstructure.pdf |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon |u https://juser.fz-juelich.de/record/830260/files/JAP-Sara-Pini-GSO-asymmetric%20bandstructure.gif?subformat=icon |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon-1440 |u https://juser.fz-juelich.de/record/830260/files/JAP-Sara-Pini-GSO-asymmetric%20bandstructure.jpg?subformat=icon-1440 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon-180 |u https://juser.fz-juelich.de/record/830260/files/JAP-Sara-Pini-GSO-asymmetric%20bandstructure.jpg?subformat=icon-180 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon-640 |u https://juser.fz-juelich.de/record/830260/files/JAP-Sara-Pini-GSO-asymmetric%20bandstructure.jpg?subformat=icon-640 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x pdfa |u https://juser.fz-juelich.de/record/830260/files/JAP-Sara-Pini-GSO-asymmetric%20bandstructure.pdf?subformat=pdfa |
| 909 | C | O | |o oai:juser.fz-juelich.de:830260 |p openaire |p open_access |p driver |p VDB |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)165625 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)128631 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2017 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |
| 915 | _ | _ | |a Embargoed OpenAccess |0 StatID:(DE-HGF)0530 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b J APPL PHYS : 2015 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-82)080009_20140620 |k JARA-FIT |l JARA-FIT |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-82)080009_20140620 |
| 980 | 1 | _ | |a FullTexts |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|