%0 Journal Article
%A Schulte-Braucks, Christian
%A Hofmann, Emily
%A Glass, Stefan
%A von den Driesch, Nils
%A Mussler, Gregor
%A Breuer, Uwe
%A Hartmann, Jean-Michel
%A Zaumseil, Peter
%A Schröder, Thomas
%A Zhao, Qing-Tai
%A Mantl, Siegfried
%A Buca, Dan
%T Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
%J Journal of applied physics
%V 121
%N 20
%@ 1089-7550
%C Melville, NY
%I American Inst. of Physics
%M FZJ-2017-03896
%P 205705 -
%D 2017
%X We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain.
%F PUB:(DE-HGF)16
%9 Journal Article
%U <Go to ISI:>//WOS:000404164200029
%R 10.1063/1.4984117
%U https://juser.fz-juelich.de/record/830329