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000830329 1001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b0$$eCorresponding author
000830329 245__ $$aSchottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
000830329 260__ $$aMelville, NY$$bAmerican Inst. of Physics$$c2017
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000830329 520__ $$aWe present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain.
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000830329 7001_ $$0P:(DE-HGF)0$$aHofmann, Emily$$b1
000830329 7001_ $$0P:(DE-Juel1)165997$$aGlass, Stefan$$b2
000830329 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b3
000830329 7001_ $$0P:(DE-Juel1)128617$$aMussler, Gregor$$b4
000830329 7001_ $$0P:(DE-Juel1)133840$$aBreuer, Uwe$$b5
000830329 7001_ $$0P:(DE-HGF)0$$aHartmann, Jean-Michel$$b6
000830329 7001_ $$0P:(DE-HGF)0$$aZaumseil, Peter$$b7
000830329 7001_ $$0P:(DE-HGF)0$$aSchröder, Thomas$$b8
000830329 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b9
000830329 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b10
000830329 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan$$b11
000830329 773__ $$0PERI:(DE-600)1476463-5$$a10.1063/1.4984117$$gVol. 121, no. 20, p. 205705 -$$n20$$p205705 -$$tJournal of applied physics$$v121$$x1089-7550$$y2017
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