TY  - JOUR
AU  - Schulte-Braucks, Christian
AU  - Hofmann, Emily
AU  - Glass, Stefan
AU  - von den Driesch, Nils
AU  - Mussler, Gregor
AU  - Breuer, Uwe
AU  - Hartmann, Jean-Michel
AU  - Zaumseil, Peter
AU  - Schröder, Thomas
AU  - Zhao, Qing-Tai
AU  - Mantl, Siegfried
AU  - Buca, Dan
TI  - Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts
JO  - Journal of applied physics
VL  - 121
IS  - 20
SN  - 1089-7550
CY  - Melville, NY
PB  - American Inst. of Physics
M1  - FZJ-2017-03896
SP  - 205705 -
PY  - 2017
AB  - We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000404164200029
DO  - DOI:10.1063/1.4984117
UR  - https://juser.fz-juelich.de/record/830329
ER  -