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@ARTICLE{SchulteBraucks:830329,
      author       = {Schulte-Braucks, Christian and Hofmann, Emily and Glass,
                      Stefan and von den Driesch, Nils and Mussler, Gregor and
                      Breuer, Uwe and Hartmann, Jean-Michel and Zaumseil, Peter
                      and Schröder, Thomas and Zhao, Qing-Tai and Mantl,
                      Siegfried and Buca, Dan},
      title        = {{S}chottky barrier tuning via dopant segregation in
                      {N}i{G}e{S}n-{G}e{S}n contacts},
      journal      = {Journal of applied physics},
      volume       = {121},
      number       = {20},
      issn         = {1089-7550},
      address      = {Melville, NY},
      publisher    = {American Inst. of Physics},
      reportid     = {FZJ-2017-03896},
      pages        = {205705 -},
      year         = {2017},
      abstract     = {We present a comprehensive study on the formation and
                      tuning of the Schottky barrier of NiGeSn metallic alloys on
                      Ge1-xSnx semiconductors. First, the Ni metallization of GeSn
                      is investigated for a wide range of Sn contents
                      (x = 0–0.125). Structural analysis reveals the
                      existence of different poly-crystalline NiGeSn and
                      Ni3(GeSn)5 phases depending on the Sn content. Electrical
                      measurements confirm a low NiGeSn sheet resistance of 12
                      Ω/□ almost independent of the Sn content. We extracted
                      from Schottky barrier height measurements in
                      NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky
                      barriers for the holes below 0.15 eV. They decrease with
                      the Sn content, thereby confirming NiGeSn as an ideal metal
                      alloy for p-type contacts. Dopant segregation for both p-
                      and n-type dopants is investigated as a technique to
                      effectively modify the Schottky barrier of NiGeSn/GeSn
                      contacts. Secondary ion mass spectroscopy is employed to
                      analyze dopant segregation and reveal its dependence on both
                      the Sn content and biaxial layer strain.},
      cin          = {PGI-9 / ZEA-3},
      ddc          = {530},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)ZEA-3-20090406},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521) / E2SWITCH - Energy Efficient Tunnel FET Switches
                      and Circuits (619509)},
      pid          = {G:(DE-HGF)POF3-521 / G:(EU-Grant)619509},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000404164200029},
      doi          = {10.1063/1.4984117},
      url          = {https://juser.fz-juelich.de/record/830329},
}