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| Hauptseite > Publikationsdatenbank > Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts > print |
| Hauptseite > Publikationsdatenbank > Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts > print |
| 001 | 830329 | ||
| 005 | 20210129230504.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4984117 |2 doi |
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| 100 | 1 | _ | |a Schulte-Braucks, Christian |0 P:(DE-Juel1)161530 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts |
| 260 | _ | _ | |a Melville, NY |c 2017 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain. |
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| 773 | _ | _ | |a 10.1063/1.4984117 |g Vol. 121, no. 20, p. 205705 - |0 PERI:(DE-600)1476463-5 |n 20 |p 205705 - |t Journal of applied physics |v 121 |y 2017 |x 1089-7550 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |u https://juser.fz-juelich.de/record/830329/files/1.4984117.pdf |
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