guest ::
| Home > Publications database > Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts > print |
| Home > Publications database > Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts > print |
| 001 | 830329 | ||
| 005 | 20210129230504.0 | ||
| 024 | 7 | _ | |a 10.1063/1.4984117 |2 doi |
| 024 | 7 | _ | |a 0021-8979 |2 ISSN |
| 024 | 7 | _ | |a 0148-6349 |2 ISSN |
| 024 | 7 | _ | |a 1089-7550 |2 ISSN |
| 024 | 7 | _ | |a WOS:000404164200029 |2 WOS |
| 024 | 7 | _ | |a 2128/16841 |2 Handle |
| 037 | _ | _ | |a FZJ-2017-03896 |
| 082 | _ | _ | |a 530 |
| 100 | 1 | _ | |a Schulte-Braucks, Christian |0 P:(DE-Juel1)161530 |b 0 |e Corresponding author |
| 245 | _ | _ | |a Schottky barrier tuning via dopant segregation in NiGeSn-GeSn contacts |
| 260 | _ | _ | |a Melville, NY |c 2017 |b American Inst. of Physics |
| 336 | 7 | _ | |a article |2 DRIVER |
| 336 | 7 | _ | |a Output Types/Journal article |2 DataCite |
| 336 | 7 | _ | |a Journal Article |b journal |m journal |0 PUB:(DE-HGF)16 |s 1496394595_2203 |2 PUB:(DE-HGF) |
| 336 | 7 | _ | |a ARTICLE |2 BibTeX |
| 336 | 7 | _ | |a JOURNAL_ARTICLE |2 ORCID |
| 336 | 7 | _ | |a Journal Article |0 0 |2 EndNote |
| 520 | _ | _ | |a We present a comprehensive study on the formation and tuning of the Schottky barrier of NiGeSn metallic alloys on Ge1-xSnx semiconductors. First, the Ni metallization of GeSn is investigated for a wide range of Sn contents (x = 0–0.125). Structural analysis reveals the existence of different poly-crystalline NiGeSn and Ni3(GeSn)5 phases depending on the Sn content. Electrical measurements confirm a low NiGeSn sheet resistance of 12 Ω/□ almost independent of the Sn content. We extracted from Schottky barrier height measurements in NiGeSn/GeSn/NiGeSn metal-semiconductor-metal diodes Schottky barriers for the holes below 0.15 eV. They decrease with the Sn content, thereby confirming NiGeSn as an ideal metal alloy for p-type contacts. Dopant segregation for both p- and n-type dopants is investigated as a technique to effectively modify the Schottky barrier of NiGeSn/GeSn contacts. Secondary ion mass spectroscopy is employed to analyze dopant segregation and reveal its dependence on both the Sn content and biaxial layer strain. |
| 536 | _ | _ | |a 521 - Controlling Electron Charge-Based Phenomena (POF3-521) |0 G:(DE-HGF)POF3-521 |c POF3-521 |f POF III |x 0 |
| 536 | _ | _ | |a E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) |0 G:(EU-Grant)619509 |c 619509 |f FP7-ICT-2013-11 |x 1 |
| 588 | _ | _ | |a Dataset connected to CrossRef |
| 700 | 1 | _ | |a Hofmann, Emily |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Glass, Stefan |0 P:(DE-Juel1)165997 |b 2 |
| 700 | 1 | _ | |a von den Driesch, Nils |0 P:(DE-Juel1)161247 |b 3 |
| 700 | 1 | _ | |a Mussler, Gregor |0 P:(DE-Juel1)128617 |b 4 |
| 700 | 1 | _ | |a Breuer, Uwe |0 P:(DE-Juel1)133840 |b 5 |
| 700 | 1 | _ | |a Hartmann, Jean-Michel |0 P:(DE-HGF)0 |b 6 |
| 700 | 1 | _ | |a Zaumseil, Peter |0 P:(DE-HGF)0 |b 7 |
| 700 | 1 | _ | |a Schröder, Thomas |0 P:(DE-HGF)0 |b 8 |
| 700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 9 |
| 700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 10 |
| 700 | 1 | _ | |a Buca, Dan |0 P:(DE-Juel1)125569 |b 11 |
| 773 | _ | _ | |a 10.1063/1.4984117 |g Vol. 121, no. 20, p. 205705 - |0 PERI:(DE-600)1476463-5 |n 20 |p 205705 - |t Journal of applied physics |v 121 |y 2017 |x 1089-7550 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |u https://juser.fz-juelich.de/record/830329/files/1.4984117.pdf |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon |u https://juser.fz-juelich.de/record/830329/files/1.4984117.gif?subformat=icon |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon-180 |u https://juser.fz-juelich.de/record/830329/files/1.4984117.jpg?subformat=icon-180 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x icon-700 |u https://juser.fz-juelich.de/record/830329/files/1.4984117.jpg?subformat=icon-700 |
| 856 | 4 | _ | |y Published on 2017-05-31. Available in OpenAccess from 2018-05-31. |x pdfa |u https://juser.fz-juelich.de/record/830329/files/1.4984117.pdf?subformat=pdfa |
| 909 | C | O | |o oai:juser.fz-juelich.de:830329 |p openaire |p open_access |p driver |p VDB |p ec_fundedresources |p dnbdelivery |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 0 |6 P:(DE-Juel1)161530 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 1 |6 0000-0002-1826-5280 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 2 |6 P:(DE-Juel1)165997 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 3 |6 P:(DE-Juel1)161247 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 4 |6 P:(DE-Juel1)128617 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 5 |6 P:(DE-Juel1)133840 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 9 |6 P:(DE-Juel1)128649 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 10 |6 P:(DE-Juel1)128609 |
| 910 | 1 | _ | |a Forschungszentrum Jülich |0 I:(DE-588b)5008462-8 |k FZJ |b 11 |6 P:(DE-Juel1)125569 |
| 913 | 1 | _ | |a DE-HGF |b Key Technologies |l Future Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT) |1 G:(DE-HGF)POF3-520 |0 G:(DE-HGF)POF3-521 |2 G:(DE-HGF)POF3-500 |v Controlling Electron Charge-Based Phenomena |x 0 |4 G:(DE-HGF)POF |3 G:(DE-HGF)POF3 |
| 914 | 1 | _ | |y 2017 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0200 |2 StatID |b SCOPUS |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0600 |2 StatID |b Ebsco Academic Search |
| 915 | _ | _ | |a Embargoed OpenAccess |0 StatID:(DE-HGF)0530 |2 StatID |
| 915 | _ | _ | |a JCR |0 StatID:(DE-HGF)0100 |2 StatID |b J APPL PHYS : 2015 |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0150 |2 StatID |b Web of Science Core Collection |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0110 |2 StatID |b Science Citation Index |
| 915 | _ | _ | |a WoS |0 StatID:(DE-HGF)0111 |2 StatID |b Science Citation Index Expanded |
| 915 | _ | _ | |a IF < 5 |0 StatID:(DE-HGF)9900 |2 StatID |
| 915 | _ | _ | |a Peer Review |0 StatID:(DE-HGF)0030 |2 StatID |b ASC |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)1150 |2 StatID |b Current Contents - Physical, Chemical and Earth Sciences |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0300 |2 StatID |b Medline |
| 915 | _ | _ | |a Nationallizenz |0 StatID:(DE-HGF)0420 |2 StatID |
| 915 | _ | _ | |a DBCoverage |0 StatID:(DE-HGF)0199 |2 StatID |b Thomson Reuters Master Journal List |
| 920 | _ | _ | |l yes |
| 920 | 1 | _ | |0 I:(DE-Juel1)PGI-9-20110106 |k PGI-9 |l Halbleiter-Nanoelektronik |x 0 |
| 920 | 1 | _ | |0 I:(DE-Juel1)ZEA-3-20090406 |k ZEA-3 |l Analytik |x 1 |
| 980 | _ | _ | |a journal |
| 980 | _ | _ | |a VDB |
| 980 | _ | _ | |a UNRESTRICTED |
| 980 | _ | _ | |a I:(DE-Juel1)PGI-9-20110106 |
| 980 | _ | _ | |a I:(DE-Juel1)ZEA-3-20090406 |
| 980 | 1 | _ | |a FullTexts |
| Library | Collection | CLSMajor | CLSMinor | Language | Author |
|---|