000834524 001__ 834524
000834524 005__ 20210129230707.0
000834524 0247_ $$2doi$$a10.1039/C6TC04807B
000834524 0247_ $$2ISSN$$a2050-7526
000834524 0247_ $$2ISSN$$a2050-7534
000834524 0247_ $$2WOS$$aWOS:000392813800011
000834524 037__ $$aFZJ-2017-04453
000834524 082__ $$a540
000834524 1001_ $$0P:(DE-HGF)0$$aStarschich, S.$$b0$$eCorresponding author
000834524 245__ $$aAn extensive study of the influence of dopants on the ferroelectric properties of HfO 2
000834524 260__ $$aLondon [u.a.]$$bRSC$$c2017
000834524 3367_ $$2DRIVER$$aarticle
000834524 3367_ $$2DataCite$$aOutput Types/Journal article
000834524 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1499247043_16481
000834524 3367_ $$2BibTeX$$aARTICLE
000834524 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000834524 3367_ $$00$$2EndNote$$aJournal Article
000834524 520__ $$aThe ferroelectric properties of hafnium oxide based thin films prepared by chemical solution deposition (CSD) are investigated. In this extensive study, a wealth of strongly different dopants (size and valence) and dopant concentrations is used to induce ferroelectricity in 42 nm thin films. Using the same precursors and preparation conditions for all dopants a good comparability is given. In particular, the dopant size appears to have a crucial impact on the resulting ferroelectric properties. For smaller dopants only a small ferroelectric response is observed whereas for larger dopants the remanent polarization is increased significantly. The crystal phase for varying dopant concentrations and dopant sizes is investigated by grazing incidence X-ray diffractions (GI-XRD). A dominating cubic phase is found for doping concentrations showing the highest remanent polarization. Similar to first CSD studies on Y:HfO2, this is reflected in a prominent wake-up behavior, which is attributed to a phase transition from cubic to orthorhombic during field cycling.
000834524 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000834524 588__ $$aDataset connected to CrossRef
000834524 7001_ $$0P:(DE-Juel1)130551$$aBoettger, Ulrich$$b1
000834524 773__ $$0PERI:(DE-600)2702245-6$$a10.1039/C6TC04807B$$gVol. 5, no. 2, p. 333 - 338$$n2$$p333 - 338$$tJournal of materials chemistry / C$$v5$$x2050-7534$$y2017
000834524 8564_ $$uhttps://juser.fz-juelich.de/record/834524/files/c6tc04807b.pdf$$yRestricted
000834524 8564_ $$uhttps://juser.fz-juelich.de/record/834524/files/c6tc04807b.gif?subformat=icon$$xicon$$yRestricted
000834524 8564_ $$uhttps://juser.fz-juelich.de/record/834524/files/c6tc04807b.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000834524 8564_ $$uhttps://juser.fz-juelich.de/record/834524/files/c6tc04807b.jpg?subformat=icon-180$$xicon-180$$yRestricted
000834524 8564_ $$uhttps://juser.fz-juelich.de/record/834524/files/c6tc04807b.jpg?subformat=icon-640$$xicon-640$$yRestricted
000834524 8564_ $$uhttps://juser.fz-juelich.de/record/834524/files/c6tc04807b.pdf?subformat=pdfa$$xpdfa$$yRestricted
000834524 909CO $$ooai:juser.fz-juelich.de:834524$$pVDB
000834524 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130551$$aForschungszentrum Jülich$$b1$$kFZJ
000834524 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000834524 9141_ $$y2017
000834524 915__ $$0StatID:(DE-HGF)0400$$2StatID$$aAllianz-Lizenz / DFG
000834524 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bJ MATER CHEM C : 2015
000834524 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000834524 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000834524 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000834524 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000834524 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000834524 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000834524 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000834524 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000834524 915__ $$0StatID:(DE-HGF)9905$$2StatID$$aIF >= 5$$bJ MATER CHEM C : 2015
000834524 920__ $$lyes
000834524 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000834524 980__ $$ajournal
000834524 980__ $$aVDB
000834524 980__ $$aI:(DE-Juel1)PGI-7-20110106
000834524 980__ $$aUNRESTRICTED