% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Starschich:834524,
      author       = {Starschich, S. and Boettger, Ulrich},
      title        = {{A}n extensive study of the influence of dopants on the
                      ferroelectric properties of {H}f{O} 2},
      journal      = {Journal of materials chemistry / C},
      volume       = {5},
      number       = {2},
      issn         = {2050-7534},
      address      = {London [u.a.]},
      publisher    = {RSC},
      reportid     = {FZJ-2017-04453},
      pages        = {333 - 338},
      year         = {2017},
      abstract     = {The ferroelectric properties of hafnium oxide based thin
                      films prepared by chemical solution deposition (CSD) are
                      investigated. In this extensive study, a wealth of strongly
                      different dopants (size and valence) and dopant
                      concentrations is used to induce ferroelectricity in 42 nm
                      thin films. Using the same precursors and preparation
                      conditions for all dopants a good comparability is given. In
                      particular, the dopant size appears to have a crucial impact
                      on the resulting ferroelectric properties. For smaller
                      dopants only a small ferroelectric response is observed
                      whereas for larger dopants the remanent polarization is
                      increased significantly. The crystal phase for varying
                      dopant concentrations and dopant sizes is investigated by
                      grazing incidence X-ray diffractions (GI-XRD). A dominating
                      cubic phase is found for doping concentrations showing the
                      highest remanent polarization. Similar to first CSD studies
                      on Y:HfO2, this is reflected in a prominent wake-up
                      behavior, which is attributed to a phase transition from
                      cubic to orthorhombic during field cycling.},
      cin          = {PGI-7},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000392813800011},
      doi          = {10.1039/C6TC04807B},
      url          = {https://juser.fz-juelich.de/record/834524},
}