Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM using and Oxygen Blocking Layer - JuSER

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Home > Publications database > Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM using and Oxygen Blocking Layer

Conference Presentation (Other)

Overcoming the RESET Limitation in Tantalum Oxide-Based ReRAM using and Oxygen Blocking Layer

Schönhals, A. ; Kindsmüller, A. ; La Torre, C. ; Zhang, H.FZJ* ; Hoffmann-Eifert, S.FZJ* ; Menzel, S.FZJ* ; Waser, R.FZJ* ; Wouters, D. J.

2017

2017 IEEE International Memory Workshop, (IMW 2017), Monterey, USA, 14 May 2017 - 17 May 2017

Contributing Institute(s):

Elektronische Materialien (PGI-7)

Research Program(s):

521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017

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Document types > Presentations > Conference Presentations
Institute Collections > PGI > PGI-7
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Publications database

Record created 2017-07-05, last modified 2021-01-29

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