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000834528 1001_ $$0P:(DE-HGF)0$$aWouters, D. J.$$b0
000834528 1112_ $$aInternational Conference on Memristive Materials, Devices  & Systems$$cAthens$$d2017-04-03 - 2017-04-06$$g(Memrisys 2017)$$wGreece
000834528 245__ $$aInfluence of ReRAM Device Characteristics on the performance of Logic-in-Memory Concepts
000834528 260__ $$c2017
000834528 3367_ $$033$$2EndNote$$aConference Paper
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000834528 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000834528 7001_ $$0P:(DE-HGF)0$$aSiemon, A.$$b1
000834528 7001_ $$0P:(DE-HGF)0$$aXie, L..$$b2
000834528 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b3$$ufzj
000834528 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b4$$ufzj
000834528 7001_ $$0P:(DE-HGF)0$$aHamdioui, S.$$b5
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000834528 9141_ $$y2017
000834528 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
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