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@ARTICLE{Li:834562,
      author       = {Li, Xinru and Dai, Ying and Niu, Chengwang and Ma, Yandong
                      and Wei, Wei and Huang, Baibiao},
      title        = {{M}o{T}e2 is a good match for {G}e{I} by preserving quantum
                      spin {H}all phase},
      journal      = {Nano research},
      volume       = {10},
      number       = {8},
      issn         = {1998-0000},
      address      = {[S.l.]},
      publisher    = {Tsinghua Press},
      reportid     = {FZJ-2017-04490},
      pages        = {2823 - 2832},
      year         = {2017},
      abstract     = {Quantum spin Hall (QSH) insulator is a new class of
                      materials that is quickly becoming mainstream in
                      condensed-matter physics. The main obstacle for the
                      development of QSH insulators is that their strong
                      interactions with substrates make them difficult to study
                      experimentally. In this study, using density functional
                      theory, we discovered that MoTe2 is a good match for a GeI
                      monolayer. The thermal stability of a van der Waals
                      GeI/MoTe2 heterosheet was examined via molecular-dynamics
                      simulations. Simulated scanning tunneling microscopy
                      revealed that the GeI monolayer perfectly preserves the
                      bulked honeycomb structure of MoTe2. The GeI on MoTe2 was
                      confirmed to maintain its topological band structure with a
                      sizable indirect bulk bandgap of 0.24 eV by directly
                      calculating the spin Chern number to be −1. As expected,
                      the electron mobility of the GeI is enhanced by MoTe2
                      substrate restriction. According to deformation-potential
                      theory with the effective-mass approximation, the electron
                      mobility of GeI/MoTe2 was estimated as 372.7
                      cm2·s−1·V−1 at 300 K, which is 20 times higher than
                      that of freestanding GeI. Our research shows that
                      traditional substrates always destroy the topological states
                      and hinder the electron transport in QSH insulators, and
                      pave way for the further realization and utilization of QSH
                      insulators at room temperature.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142)},
      pid          = {G:(DE-HGF)POF3-142},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000404560100024},
      doi          = {10.1007/s12274-017-1488-4},
      url          = {https://juser.fz-juelich.de/record/834562},
}