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@ARTICLE{Wei:834563,
author = {Wei, Wei and Dai, Ying and Niu, Chengwang and Li, Xiao and
Ma, Yandong and Huang, Baibiao},
title = {{E}lectronic properties of two-dimensional van der {W}aals
{G}a{S}/{G}a{S}e heterostructures},
journal = {Journal of materials chemistry / C},
volume = {3},
number = {43},
issn = {2050-7534},
address = {London [u.a.]},
publisher = {RSC},
reportid = {FZJ-2017-04491},
pages = {11548 - 11554},
year = {2015},
abstract = {On the basis of density functional electronic calculations,
heterostructures of single-layer GaS and GaSe were found to
exhibit novel physical properties due to their specific
interfacing effects and versatile structural features. We
verified that electrons and holes can be distributed on the
opposite constituent of the heterostructures, forming a
type-II band alignment and enabling physical separation of
excitons, which is highly desirable in applications such as
solar energy conversion. We found the Rashba effects in the
two-dimensional GaS/GaSe heterostructures due to the
breaking of inversion symmetry and the intrinsic
polarization, which reveals new possibility in applications
in spintronic and electronic nanodevices. In addition, we
confirmed that the electronic properties of GaS/GaSe van der
Waals heterostructures can be continuously tuned by external
strain.},
cin = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
ddc = {540},
cid = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
$I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
pnm = {142 - Controlling Spin-Based Phenomena (POF3-142)},
pid = {G:(DE-HGF)POF3-142},
typ = {PUB:(DE-HGF)16},
UT = {WOS:000364214800034},
doi = {10.1039/C5TC02975A},
url = {https://juser.fz-juelich.de/record/834563},
}