TY  - JOUR
AU  - Wei, Wei
AU  - Dai, Ying
AU  - Niu, Chengwang
AU  - Huang, Baibiao
TI  - Controlling the Electronic Structures and Properties of in-Plane Transition-Metal Dichalcogenides Quantum Wells
JO  - Scientific reports
VL  - 5
IS  - 1
SN  - 2045-2322
CY  - London
PB  - Nature Publishing Group
M1  - FZJ-2017-04492
SP  - 17578
PY  - 2015
AB  - In-plane transition-metal dichalcogenides (TMDs) quantum wells have been studied on the basis of first-principles density functional calculations to reveal how to control the electronic structures and the properties. In collection of quantum confinement, strain and intrinsic electric field, TMD quantum wells offer a diverse of exciting new physics. The band gap can be continuously reduced ascribed to the potential drop over the embedded TMD and the strain substantially affects the band gap nature. The true type-II alignment forms due to the coherent lattice and strong interface coupling suggesting the effective separation and collection of excitons. Interestingly, two-dimensional quantum wells of in-plane TMD can enrich the photoluminescence properties of TMD materials. The intrinsic electric polarization enhances the spin-orbital coupling and demonstrates the possibility to achieve topological insulator state and valleytronics in TMD quantum wells. In-plane TMD quantum wells have opened up new possibilities of applications in next-generation devices at nanoscale.
LB  - PUB:(DE-HGF)16
UR  - <Go to ISI:>//WOS:000365419900001
DO  - DOI:10.1038/srep17578
UR  - https://juser.fz-juelich.de/record/834564
ER  -