% IMPORTANT: The following is UTF-8 encoded.  This means that in the presence
% of non-ASCII characters, it will not work with BibTeX 0.99 or older.
% Instead, you should use an up-to-date BibTeX implementation like “bibtex8” or
% “biber”.

@ARTICLE{Wei:834564,
      author       = {Wei, Wei and Dai, Ying and Niu, Chengwang and Huang,
                      Baibiao},
      title        = {{C}ontrolling the {E}lectronic {S}tructures and
                      {P}roperties of in-{P}lane {T}ransition-{M}etal
                      {D}ichalcogenides {Q}uantum {W}ells},
      journal      = {Scientific reports},
      volume       = {5},
      number       = {1},
      issn         = {2045-2322},
      address      = {London},
      publisher    = {Nature Publishing Group},
      reportid     = {FZJ-2017-04492},
      pages        = {17578},
      year         = {2015},
      abstract     = {In-plane transition-metal dichalcogenides (TMDs) quantum
                      wells have been studied on the basis of first-principles
                      density functional calculations to reveal how to control the
                      electronic structures and the properties. In collection of
                      quantum confinement, strain and intrinsic electric field,
                      TMD quantum wells offer a diverse of exciting new physics.
                      The band gap can be continuously reduced ascribed to the
                      potential drop over the embedded TMD and the strain
                      substantially affects the band gap nature. The true type-II
                      alignment forms due to the coherent lattice and strong
                      interface coupling suggesting the effective separation and
                      collection of excitons. Interestingly, two-dimensional
                      quantum wells of in-plane TMD can enrich the
                      photoluminescence properties of TMD materials. The intrinsic
                      electric polarization enhances the spin-orbital coupling and
                      demonstrates the possibility to achieve topological
                      insulator state and valleytronics in TMD quantum wells.
                      In-plane TMD quantum wells have opened up new possibilities
                      of applications in next-generation devices at nanoscale.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {000},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142)},
      pid          = {G:(DE-HGF)POF3-142},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000365419900001},
      doi          = {10.1038/srep17578},
      url          = {https://juser.fz-juelich.de/record/834564},
}