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000835983 1001_ $$0P:(DE-HGF)0$$aDing, R.$$b0$$eCorresponding author
000835983 245__ $$aAdvances in understanding of high- Z material erosion and re-deposition in low- Z wall environment in DIII-D
000835983 260__ $$aVienna$$bIAEA$$c2017
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000835983 520__ $$aDedicated DIII-D experiments coupled with modeling reveal that the net erosion rate of high-Z materials, i.e. Mo and W, is strongly affected by carbon concentration in the plasma and the magnetic pre-sheath properties. Different methods such as electrical biasing and local gas injection have been investigated to control high-Z material erosion. The net erosion rate of high-Z materials is significantly reduced due to the high local re-deposition ratio. The ERO modeling shows that the local re-deposition ratio is mainly controlled by the electric field and plasma density within the magnetic pre-sheath. The net erosion can be significantly suppressed by reducing the sheath potential drop. A high carbon impurity concentration in the background plasma is also found to reduce the net erosion rate of high-Z materials. Both DIII-D experiments and modeling show that local 13CH4 injection can create a carbon coating on the metal surface. The profile of 13C deposition provides quantitative information on radial transport due to E  ×  B drift and the cross-field diffusion. The deuterium gas injection upstream of the W sample can reduce W net erosion rate by plasma perturbation. In H-mode plasmas, the measured inter-ELM W erosion rates at different radial locations are well reproduced by ERO modeling taking into account charge-state-resolved carbon ion flux in the background plasma calculated using the OEDGE code.
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000835983 7001_ $$0P:(DE-HGF)0$$aRudakov, D. L.$$b1
000835983 7001_ $$0P:(DE-HGF)0$$aStangeby, P. C.$$b2
000835983 7001_ $$0P:(DE-HGF)0$$aWampler, W. R.$$b3
000835983 7001_ $$0P:(DE-HGF)0$$aAbrams, T.$$b4
000835983 7001_ $$0P:(DE-Juel1)129976$$aBrezinsek, S.$$b5$$eCorresponding author
000835983 7001_ $$0P:(DE-HGF)0$$aBriesemeister, A.$$b6
000835983 7001_ $$0P:(DE-HGF)0$$aBykov, I.$$b7
000835983 7001_ $$0P:(DE-HGF)0$$aChan, V. S.$$b8
000835983 7001_ $$0P:(DE-HGF)0$$aChrobak, C. P.$$b9
000835983 7001_ $$0P:(DE-HGF)0$$aElder, J. D.$$b10
000835983 7001_ $$0P:(DE-HGF)0$$aGuo, H. Y.$$b11
000835983 7001_ $$0P:(DE-HGF)0$$aGuterl, J.$$b12
000835983 7001_ $$0P:(DE-Juel1)2620$$aKirschner, A.$$b13
000835983 7001_ $$0P:(DE-HGF)0$$aLasnier, C. J.$$b14
000835983 7001_ $$0P:(DE-HGF)0$$aLeonard, A. W.$$b15
000835983 7001_ $$0P:(DE-HGF)0$$aMakowski, M. A.$$b16
000835983 7001_ $$0P:(DE-HGF)0$$aMcLean, A. G.$$b17
000835983 7001_ $$0P:(DE-HGF)0$$aSnyder, P. B.$$b18
000835983 7001_ $$0P:(DE-HGF)0$$aThomas, D. M.$$b19
000835983 7001_ $$0P:(DE-HGF)0$$aTskhakaya, D.$$b20
000835983 7001_ $$0P:(DE-HGF)0$$aUnterberg, E. A.$$b21
000835983 7001_ $$0P:(DE-HGF)0$$aWang, H. Q.$$b22
000835983 7001_ $$0P:(DE-HGF)0$$aWatkins, J. G.$$b23
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