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@ARTICLE{Rusu:836008,
      author       = {Rusu, M. I. and Pardanaud, C. and Ferro, Y. and Giacometti,
                      G. and Martin, C. and Addab, Y. and Roubin, P. and
                      Minissale, M. and Ferri, L. and Virot, F. and Barrachin, M.
                      and Lungu, C. P. and Porosnicu, C. and Dinca, P. and Lungu,
                      M. and Köppen, M. and Hansen, P. and Linsmeier, Ch.},
      title        = {{P}reparing the future post-mortem analysis of
                      beryllium-based {JET} and {ITER} samples by
                      multi-wavelengths {R}aman spectroscopy on implanted {B}e,
                      and co-deposited {B}e},
      journal      = {Nuclear fusion},
      volume       = {57},
      number       = {7},
      issn         = {1741-4326},
      address      = {Vienna},
      publisher    = {IAEA},
      reportid     = {FZJ-2017-05133},
      pages        = {076035},
      year         = {2017},
      abstract     = {This study demonstrates that Raman microscopy is a suitable
                      technique for future post mortem analyses of JET and ITER
                      plasma facing components. We focus here on laboratory
                      deposited and bombarded samples of beryllium and beryllium
                      carbides and start to build a reference spectral databases
                      for fusion relevant beryllium-based materials. We identified
                      the beryllium phonon density of states, its second harmonic
                      and E 2G and B 2G second harmonic and combination modes for
                      defective beryllium in the spectral range 300–700 and
                      700–1300 cm−1, lying close to Be–D modes of
                      beryllium hydrides. We also identified beryllium carbide
                      signature, Be2C, combining Raman microscopy and DFT
                      calculation. We have shown that, depending on the optical
                      constants of the material probed, in depth sensitivity at
                      the nanometer scale can be performed using different
                      wavelengths. This way, we demonstrate that multi-wavelength
                      Raman microscopy is sensitive to in-depth stress caused by
                      ion implantation (down to  ≈30 nm under the surface
                      for Be) and Be/C concentration (down to 400 nm or more
                      under the surface for Be+C), which is a main contribution of
                      this work. The depth resolution reached can then be adapted
                      for studying the supersaturated surface layer found on
                      tokamak deposits.},
      cin          = {IEK-4},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-4-20101013},
      pnm          = {113 - Methods and Concepts for Material Development
                      (POF3-113)},
      pid          = {G:(DE-HGF)POF3-113},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000403048600001},
      doi          = {10.1088/1741-4326/aa70bb},
      url          = {https://juser.fz-juelich.de/record/836008},
}