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@ARTICLE{Cho:836767,
      author       = {Cho, Deok-Jong and Lübben, Michael and Wiefels, Stefan and
                      Lee, Kug-Seung and Valov, Ilia},
      title        = {{I}nterfacial {M}etal–{O}xide {I}nteractions in
                      {R}esistive {S}witching {M}emories},
      journal      = {ACS applied materials $\&$ interfaces},
      volume       = {9},
      number       = {22},
      issn         = {1944-8252},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-05819},
      pages        = {19287 - 19295},
      year         = {2017},
      abstract     = {Metal oxides are commonly used as electrolytes for
                      redox-based resistive switching memories. In most cases,
                      non-noble metals are directly deposited as ohmic electrodes.
                      We demonstrate that irrespective of bulk thermodynamics
                      predictions an intermediate oxide film a few nanometers in
                      thickness is always formed at the metal/insulator interface,
                      and this layer significantly contributes to the development
                      of reliable switching characteristics. We have tested metal
                      electrodes and metal oxides mostly used for memristive
                      devices, that is, Ta, Hf, and Ti and Ta2O5, HfO2, and SiO2.
                      Intermediate oxide layers are always formed at the
                      interfaces, whereas only the rate of the electrode oxidation
                      depends on the oxygen affinity of the metal and the chemical
                      stability of the oxide matrix. Device failure is associated
                      with complete transition of short-range order to a more
                      disordered main matrix structure.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      pubmed       = {pmid:28508634},
      UT           = {WOS:000403136400097},
      doi          = {10.1021/acsami.7b02921},
      url          = {https://juser.fz-juelich.de/record/836767},
}