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@ARTICLE{Kim:836904,
      author       = {Kim, Do Yun and Lentz, Florian and Liu, Yong and Singh,
                      Aryak and Richter, Alexei and Pomaska, Manuel and Lambertz,
                      Andreas and Ding, Kaining},
      title        = {{S}elective {D}ry {E}tching of p-{T}ype {S}i {F}ilms for
                      {P}hotolithography {P}rocessing of {I}nterdigitated {B}ack
                      {C}ontact {S}ilicon {H}eterojunction {S}olar {C}ells},
      journal      = {IEEE journal of photovoltaics},
      volume       = {7},
      number       = {5},
      issn         = {2156-3381},
      address      = {New York, NY},
      publisher    = {IEEE},
      reportid     = {FZJ-2017-05936},
      pages        = {1292 - 1297},
      year         = {2017},
      abstract     = {Highly doped p-type Si thin films are hardly etched by
                      alkaline etchants unlike i- and n-type Si films. In
                      addition, the use of a HNO3/HF/H2O mixture to etch p-type Si
                      films can lead to inhomogeneous etching of p-type Si films
                      and consequently result in excessive surface roughness and
                      inferior surface passivation. For these reasons, we have
                      implemented a dry etching method to selectively pattern
                      p-type Si films for interdigitated back contact (IBC)
                      silicon heterojunction (SHJ) solar cells using a SiOx
                      masking layer. In this way, the underlying passivation layer
                      and the Si surfaces can be undamaged. In this study, the
                      etch rates of all Si films that make up IBC-SHJ solar cells
                      have been investigated in order to obtain high etch
                      selectivity and establish proper patterning steps.
                      Furthermore, we have fabricated IBC-SHJ solar cells on
                      planar wafers by using dry and wet patterning methods
                      developed in this study. As a result, a conversion
                      efficiency of $15.7\%$ is obtained with Voc of 682 mV, Jsc
                      of 33.8 mA/cm2, and FF of 0.68.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121) / HITEC
                      - Helmholtz Interdisciplinary Doctoral Training in Energy
                      and Climate Research (HITEC) (HITEC-20170406)},
      pid          = {G:(DE-HGF)POF3-121 / G:(DE-Juel1)HITEC-20170406},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000408160700017},
      doi          = {10.1109/JPHOTOV.2017.2719866},
      url          = {https://juser.fz-juelich.de/record/836904},
}