TY - JOUR
AU - Senkovskiy, Boris V.
AU - Fedorov, Alexander V.
AU - Haberer, Danny
AU - Farjam, Mani
AU - Simonov, Konstantin A.
AU - Preobrajenski, Alexei B.
AU - Mårtensson, Niels
AU - Atodiresei, Nicolae
AU - Caciuc, Vasile
AU - Blügel, Stefan
AU - Rosch, Achim
AU - Verbitskiy, Nikolay I.
AU - Hell, Martin
AU - Evtushinsky, Daniil V.
AU - German, Raphael
AU - Marangoni, Tomas
AU - van Loosdrecht, Paul H. M.
AU - Fischer, Felix R.
AU - Grüneis, Alexander
TI - Semiconductor-to-Metal Transition and Quasiparticle Renormalization in Doped Graphene Nanoribbons2
JO - Advanced electronic materials
VL - 3
IS - 4
SN - 2199-160X
CY - Chichester
PB - Wiley
M1 - FZJ-2017-06003
SP - 1600490
PY - 2017
AB - A semiconductor-to-metal transition in N = 7 armchair graphene nanoribbons causes drastic changes in its electron and phonon system. By using angle-resolved photoemission spectroscopy of lithium-doped graphene nanoribbons, a quasiparticle band gap renormalization from 2.4 to 2.1 eV is observed. Reaching high doping levels (0.05 electrons per atom), it is found that the effective mass of the conduction band carriers increases to a value equal to the free electron mass. This giant increase in the effective mass by doping is a means to enhance the density of states at the Fermi level which can have palpable impact on the transport and optical properties. Electron doping also reduces the Raman intensity by one order of magnitude, and results in relatively small (4 cm−1) hardening of the G phonon and softening of the D phonon. This suggests the importance of both lattice expansion and dynamic effects. The present work highlights that doping of a semiconducting 1D system is strikingly different from its 2D or 3D counterparts and introduces doped graphene nanoribbons as a new tunable quantum material with high potential for basic research and applications.
LB - PUB:(DE-HGF)16
UR - <Go to ISI:>//WOS:000399448600005
DO - DOI:10.1002/aelm.201600490
UR - https://juser.fz-juelich.de/record/836981
ER -