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@ARTICLE{Senkovskiy:836981,
      author       = {Senkovskiy, Boris V. and Fedorov, Alexander V. and Haberer,
                      Danny and Farjam, Mani and Simonov, Konstantin A. and
                      Preobrajenski, Alexei B. and Mårtensson, Niels and
                      Atodiresei, Nicolae and Caciuc, Vasile and Blügel, Stefan
                      and Rosch, Achim and Verbitskiy, Nikolay I. and Hell, Martin
                      and Evtushinsky, Daniil V. and German, Raphael and
                      Marangoni, Tomas and van Loosdrecht, Paul H. M. and Fischer,
                      Felix R. and Grüneis, Alexander},
      title        = {{S}emiconductor-to-{M}etal {T}ransition and {Q}uasiparticle
                      {R}enormalization in {D}oped {G}raphene {N}anoribbons2},
      journal      = {Advanced electronic materials},
      volume       = {3},
      number       = {4},
      issn         = {2199-160X},
      address      = {Chichester},
      publisher    = {Wiley},
      reportid     = {FZJ-2017-06003},
      pages        = {1600490},
      year         = {2017},
      abstract     = {A semiconductor-to-metal transition in N = 7 armchair
                      graphene nanoribbons causes drastic changes in its electron
                      and phonon system. By using angle-resolved photoemission
                      spectroscopy of lithium-doped graphene nanoribbons, a
                      quasiparticle band gap renormalization from 2.4 to 2.1 eV is
                      observed. Reaching high doping levels (0.05 electrons per
                      atom), it is found that the effective mass of the conduction
                      band carriers increases to a value equal to the free
                      electron mass. This giant increase in the effective mass by
                      doping is a means to enhance the density of states at the
                      Fermi level which can have palpable impact on the transport
                      and optical properties. Electron doping also reduces the
                      Raman intensity by one order of magnitude, and results in
                      relatively small (4 cm−1) hardening of the G phonon and
                      softening of the D phonon. This suggests the importance of
                      both lattice expansion and dynamic effects. The present work
                      highlights that doping of a semiconducting 1D system is
                      strikingly different from its 2D or 3D counterparts and
                      introduces doped graphene nanoribbons as a new tunable
                      quantum material with high potential for basic research and
                      applications.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC},
      ddc          = {621.3},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000399448600005},
      doi          = {10.1002/aelm.201600490},
      url          = {https://juser.fz-juelich.de/record/836981},
}