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@ARTICLE{Tabatabaei:837003,
      author       = {Tabatabaei, Fatemeh and Boussinot, Guillaume and Spatschek,
                      Robert and Apel, Markus and Brener, Efim},
      title        = {{P}hase field modeling of rapid crystallization in the
                      phase-change material {AIST}},
      journal      = {Applied physics / A},
      volume       = {122},
      number       = {4},
      issn         = {0340-3793},
      address      = {Berlin},
      publisher    = {Springer},
      reportid     = {FZJ-2017-06019},
      pages        = {045108},
      year         = {2017},
      abstract     = {We carry out phase field modeling as a continuum simulation
                      technique in order to study rapid crystallization processes
                      in the phase-change material AIST (Ag4In3Sb67Te26). In
                      particular, we simulate the spatio-temporal evolution of the
                      crystallization of a molten area of the phase-change
                      material embedded in a layer stack. The simulation model is
                      adapted to the experimental conditions used for recent
                      measurements of crystallization rates by a laser pulse
                      technique. Simulations are performed for substrate
                      temperatures close to the melting temperature of AIST down
                      to low temperatures when an amorphous state is involved. The
                      design of the phase field model using the thin interface
                      limit allows us to retrieve the two limiting regimes of
                      interface controlled (low temperatures) and thermal
                      transport controlled (high temperatures) dynamics. Our
                      simulations show that, generically, the crystallization
                      velocity presents a maximum in the intermediate regime where
                      both the interface mobility and the thermal transport,
                      through the molten area as well as through the layer stack,
                      are important. Simulations reveal the complex interplay of
                      all different contributions. This suggests that the maximum
                      switching velocity depends not only on material properties
                      but also on the precise design of the thin film structure
                      into which the phase-change material is embedded.},
      cin          = {IEK-2 / PGI-2},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-2-20101013 / I:(DE-Juel1)PGI-2-20110106},
      pnm          = {111 - Efficient and Flexible Power Plants (POF3-111)},
      pid          = {G:(DE-HGF)POF3-111},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000409414100029},
      doi          = {10.1063/1.4996429},
      url          = {https://juser.fz-juelich.de/record/837003},
}