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@ARTICLE{ReyesJimnez:837184,
      author       = {Reyes Jiménez, Antonia and Klöpsch, Richard and Wagner,
                      Ralf and Rodehorst, Uta C. and Kolek, Martin and Nölle,
                      Roman and Winter, Martin and Placke, Tobias},
      title        = {{A} {S}tep toward {H}igh-{E}nergy {S}ilicon-{B}ased {T}hin
                      {F}ilm {L}ithium {I}on {B}atteries},
      journal      = {ACS nano},
      volume       = {11},
      number       = {5},
      issn         = {1936-086X},
      address      = {Washington, DC},
      publisher    = {Soc.},
      reportid     = {FZJ-2017-06163},
      pages        = {4731 - 4744},
      year         = {2017},
      abstract     = {The next generation of lithium ion batteries (LIBs) with
                      increased energy density for large-scale applications, such
                      as electric mobility, and also for small electronic devices,
                      such as microbatteries and on-chip batteries, requires
                      advanced electrode active materials with enhanced specific
                      and volumetric capacities. In this regard, silicon as anode
                      material has attracted much attention due to its high
                      specific capacity. However, the enormous volume changes
                      during lithiation/delithiation are still a main obstacle
                      avoiding the broad commercial use of Si-based electrodes. In
                      this work, Si-based thin film electrodes, prepared by
                      magnetron sputtering, are studied. Herein, we present a
                      sophisticated surface design and electrode structure
                      modification by amorphous carbon layers to increase the
                      mechanical integrity and, thus, the electrochemical
                      performance. Therefore, the influence of amorphous C thin
                      film layers, either deposited on top (C/Si) or incorporated
                      between the amorphous Si thin film layers (Si/C/Si), was
                      characterized according to their physical and
                      electrochemical properties. The thin film electrodes were
                      thoroughly studied by means of electrochemical impedance
                      spectroscopy, Raman spectroscopy, X-ray photoelectron
                      spectroscopy, and atomic force microscopy. We can show that
                      the silicon thin film electrodes with an amorphous C layer
                      showed a remarkably improved electrochemical performance in
                      terms of capacity retention and Coulombic efficiency. The C
                      layer is able to mitigate the mechanical stress during
                      lithiation of the Si thin film by buffering the volume
                      changes and to reduce the loss of active lithium during
                      solid electrolyte interphase formation and cycling.},
      cin          = {IEK-12},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IEK-12-20141217},
      pnm          = {131 - Electrochemical Storage (POF3-131)},
      pid          = {G:(DE-HGF)POF3-131},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000402498400038},
      pubmed       = {28437078},
      doi          = {10.1021/acsnano.7b00922},
      url          = {https://juser.fz-juelich.de/record/837184},
}