| Hauptseite > Publikationsdatenbank > A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries > print |
| 001 | 837184 | ||
| 005 | 20240712113120.0 | ||
| 024 | 7 | _ | |a 10.1021/acsnano.7b00922 |2 doi |
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| 037 | _ | _ | |a FZJ-2017-06163 |
| 041 | _ | _ | |a English |
| 082 | _ | _ | |a 540 |
| 100 | 1 | _ | |a Reyes Jiménez, Antonia |0 P:(DE-HGF)0 |b 0 |
| 245 | _ | _ | |a A Step toward High-Energy Silicon-Based Thin Film Lithium Ion Batteries |
| 260 | _ | _ | |a Washington, DC |c 2017 |b Soc. |
| 336 | 7 | _ | |a article |2 DRIVER |
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| 520 | _ | _ | |a The next generation of lithium ion batteries (LIBs) with increased energy density for large-scale applications, such as electric mobility, and also for small electronic devices, such as microbatteries and on-chip batteries, requires advanced electrode active materials with enhanced specific and volumetric capacities. In this regard, silicon as anode material has attracted much attention due to its high specific capacity. However, the enormous volume changes during lithiation/delithiation are still a main obstacle avoiding the broad commercial use of Si-based electrodes. In this work, Si-based thin film electrodes, prepared by magnetron sputtering, are studied. Herein, we present a sophisticated surface design and electrode structure modification by amorphous carbon layers to increase the mechanical integrity and, thus, the electrochemical performance. Therefore, the influence of amorphous C thin film layers, either deposited on top (C/Si) or incorporated between the amorphous Si thin film layers (Si/C/Si), was characterized according to their physical and electrochemical properties. The thin film electrodes were thoroughly studied by means of electrochemical impedance spectroscopy, Raman spectroscopy, X-ray photoelectron spectroscopy, and atomic force microscopy. We can show that the silicon thin film electrodes with an amorphous C layer showed a remarkably improved electrochemical performance in terms of capacity retention and Coulombic efficiency. The C layer is able to mitigate the mechanical stress during lithiation of the Si thin film by buffering the volume changes and to reduce the loss of active lithium during solid electrolyte interphase formation and cycling. |
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| 700 | 1 | _ | |a Klöpsch, Richard |0 P:(DE-HGF)0 |b 1 |
| 700 | 1 | _ | |a Wagner, Ralf |0 P:(DE-HGF)0 |b 2 |
| 700 | 1 | _ | |a Rodehorst, Uta C. |0 P:(DE-HGF)0 |b 3 |
| 700 | 1 | _ | |a Kolek, Martin |0 P:(DE-HGF)0 |b 4 |
| 700 | 1 | _ | |a Nölle, Roman |0 P:(DE-HGF)0 |b 5 |
| 700 | 1 | _ | |a Winter, Martin |0 P:(DE-Juel1)166130 |b 6 |e Corresponding author |u fzj |
| 700 | 1 | _ | |a Placke, Tobias |0 0000-0002-2097-5193 |b 7 |e Corresponding author |
| 773 | _ | _ | |a 10.1021/acsnano.7b00922 |g Vol. 11, no. 5, p. 4731 - 4744 |0 PERI:(DE-600)2383064-5 |n 5 |p 4731 - 4744 |t ACS nano |v 11 |y 2017 |x 1936-086X |
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