000837188 001__ 837188
000837188 005__ 20240610120645.0
000837188 0247_ $$2doi$$a10.1002/adma.201700212
000837188 0247_ $$2ISSN$$a0935-9648
000837188 0247_ $$2ISSN$$a1521-4095
000837188 0247_ $$2WOS$$aWOS:000403280600028
000837188 0247_ $$2altmetric$$aaltmetric:19186088
000837188 0247_ $$2pmid$$apmid:28417593
000837188 037__ $$aFZJ-2017-06167
000837188 041__ $$aEnglish
000837188 082__ $$a540
000837188 1001_ $$0P:(DE-HGF)0$$aCooper, David$$b0
000837188 245__ $$aAnomalous Resistance Hysteresis in Oxide ReRAM: Oxygen Evolution and Reincorporation Revealed by In Situ TEM
000837188 260__ $$aWeinheim$$bWiley-VCH$$c2017
000837188 3367_ $$2DRIVER$$aarticle
000837188 3367_ $$2DataCite$$aOutput Types/Journal article
000837188 3367_ $$0PUB:(DE-HGF)16$$2PUB:(DE-HGF)$$aJournal Article$$bjournal$$mjournal$$s1503996487_10820
000837188 3367_ $$2BibTeX$$aARTICLE
000837188 3367_ $$2ORCID$$aJOURNAL_ARTICLE
000837188 3367_ $$00$$2EndNote$$aJournal Article
000837188 520__ $$aThe control and rational design of redox-based memristive devices, which are highly attractive candidates for next-generation nonvolatile memory and logic applications, is complicated by competing and poorly understood switching mechanisms, which can result in two coexisting resistance hystereses that have opposite voltage polarity. These competing processes can be defined as regular and anomalous resistive switching. Despite significant characterization efforts, the complex nanoscale redox processes that drive anomalous resistive switching and their implications for current transport remain poorly understood. Here, lateral and vertical mapping of O vacancy concentrations is used during the operation of such devices in situ in an aberration corrected transmission electron microscope to explain the anomalous switching mechanism. It is found that an increase (decrease) in the overall O vacancy concentration within the device after positive (negative) biasing of the Schottky-type electrode is associated with the electrocatalytic release and reincorporation of oxygen at the electrode/oxide interface and is responsible for the resistance change. This fundamental insight presents a novel perspective on resistive switching processes and opens up new technological opportunities for the implementation of memristive devices, as anomalous switching can now be suppressed selectively or used deliberately to achieve the desirable so-called deep Reset.
000837188 536__ $$0G:(DE-HGF)POF3-521$$a521 - Controlling Electron Charge-Based Phenomena (POF3-521)$$cPOF3-521$$fPOF III$$x0
000837188 588__ $$aDataset connected to CrossRef
000837188 7001_ $$0P:(DE-Juel1)159254$$aBäumer, Christoph$$b1$$eCorresponding author
000837188 7001_ $$0P:(DE-HGF)0$$aBernier, Nicolas$$b2
000837188 7001_ $$0P:(DE-HGF)0$$aMarchewka, Astrid$$b3
000837188 7001_ $$0P:(DE-HGF)0$$aLa Torre, Camilla$$b4
000837188 7001_ $$0P:(DE-Juel1)144121$$aDunin-Borkowski, Rafal$$b5
000837188 7001_ $$0P:(DE-Juel1)131022$$aWaser, R.$$b6
000837188 7001_ $$0P:(DE-Juel1)158062$$aMenzel, Stephan$$b7
000837188 7001_ $$0P:(DE-Juel1)130620$$aDittmann, Regina$$b8
000837188 773__ $$0PERI:(DE-600)1474949-x$$a10.1002/adma.201700212$$gVol. 29, no. 23, p. 1700212 -$$n23$$p1700212 $$tAdvanced materials$$v29$$x0935-9648$$y2017
000837188 8564_ $$uhttps://juser.fz-juelich.de/record/837188/files/Cooper_et_al-2017-Advanced_Materials.pdf$$yRestricted
000837188 8564_ $$uhttps://juser.fz-juelich.de/record/837188/files/Cooper_et_al-2017-Advanced_Materials.gif?subformat=icon$$xicon$$yRestricted
000837188 8564_ $$uhttps://juser.fz-juelich.de/record/837188/files/Cooper_et_al-2017-Advanced_Materials.jpg?subformat=icon-1440$$xicon-1440$$yRestricted
000837188 8564_ $$uhttps://juser.fz-juelich.de/record/837188/files/Cooper_et_al-2017-Advanced_Materials.jpg?subformat=icon-180$$xicon-180$$yRestricted
000837188 8564_ $$uhttps://juser.fz-juelich.de/record/837188/files/Cooper_et_al-2017-Advanced_Materials.jpg?subformat=icon-640$$xicon-640$$yRestricted
000837188 8564_ $$uhttps://juser.fz-juelich.de/record/837188/files/Cooper_et_al-2017-Advanced_Materials.pdf?subformat=pdfa$$xpdfa$$yRestricted
000837188 909CO $$ooai:juser.fz-juelich.de:837188$$pVDB
000837188 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)159254$$aForschungszentrum Jülich$$b1$$kFZJ
000837188 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)144121$$aForschungszentrum Jülich$$b5$$kFZJ
000837188 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)131022$$aForschungszentrum Jülich$$b6$$kFZJ
000837188 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)158062$$aForschungszentrum Jülich$$b7$$kFZJ
000837188 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)130620$$aForschungszentrum Jülich$$b8$$kFZJ
000837188 9131_ $$0G:(DE-HGF)POF3-521$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Electron Charge-Based Phenomena$$x0
000837188 9141_ $$y2017
000837188 915__ $$0StatID:(DE-HGF)0420$$2StatID$$aNationallizenz
000837188 915__ $$0StatID:(DE-HGF)0300$$2StatID$$aDBCoverage$$bMedline
000837188 915__ $$0StatID:(DE-HGF)0310$$2StatID$$aDBCoverage$$bNCBI Molecular Biology Database
000837188 915__ $$0StatID:(DE-HGF)0100$$2StatID$$aJCR$$bADV MATER : 2015
000837188 915__ $$0StatID:(DE-HGF)0200$$2StatID$$aDBCoverage$$bSCOPUS
000837188 915__ $$0StatID:(DE-HGF)0199$$2StatID$$aDBCoverage$$bThomson Reuters Master Journal List
000837188 915__ $$0StatID:(DE-HGF)0110$$2StatID$$aWoS$$bScience Citation Index
000837188 915__ $$0StatID:(DE-HGF)0150$$2StatID$$aDBCoverage$$bWeb of Science Core Collection
000837188 915__ $$0StatID:(DE-HGF)0111$$2StatID$$aWoS$$bScience Citation Index Expanded
000837188 915__ $$0StatID:(DE-HGF)1150$$2StatID$$aDBCoverage$$bCurrent Contents - Physical, Chemical and Earth Sciences
000837188 915__ $$0StatID:(DE-HGF)1160$$2StatID$$aDBCoverage$$bCurrent Contents - Engineering, Computing and Technology
000837188 915__ $$0StatID:(DE-HGF)9915$$2StatID$$aIF >= 15$$bADV MATER : 2015
000837188 9201_ $$0I:(DE-Juel1)PGI-7-20110106$$kPGI-7$$lElektronische Materialien$$x0
000837188 9201_ $$0I:(DE-Juel1)PGI-5-20110106$$kPGI-5$$lMikrostrukturforschung$$x1
000837188 9201_ $$0I:(DE-Juel1)ER-C-1-20170209$$kER-C-1$$lPhysik Nanoskaliger Systeme$$x2
000837188 980__ $$ajournal
000837188 980__ $$aVDB
000837188 980__ $$aI:(DE-Juel1)PGI-7-20110106
000837188 980__ $$aI:(DE-Juel1)PGI-5-20110106
000837188 980__ $$aI:(DE-Juel1)ER-C-1-20170209
000837188 980__ $$aUNRESTRICTED
000837188 981__ $$aI:(DE-Juel1)ER-C-1-20170209