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@ARTICLE{Cooper:837188,
      author       = {Cooper, David and Bäumer, Christoph and Bernier, Nicolas
                      and Marchewka, Astrid and La Torre, Camilla and
                      Dunin-Borkowski, Rafal and Waser, R. and Menzel, Stephan and
                      Dittmann, Regina},
      title        = {{A}nomalous {R}esistance {H}ysteresis in {O}xide {R}e{RAM}:
                      {O}xygen {E}volution and {R}eincorporation {R}evealed by
                      {I}n {S}itu {TEM}},
      journal      = {Advanced materials},
      volume       = {29},
      number       = {23},
      issn         = {0935-9648},
      address      = {Weinheim},
      publisher    = {Wiley-VCH},
      reportid     = {FZJ-2017-06167},
      pages        = {1700212},
      year         = {2017},
      abstract     = {The control and rational design of redox-based memristive
                      devices, which are highly attractive candidates for
                      next-generation nonvolatile memory and logic applications,
                      is complicated by competing and poorly understood switching
                      mechanisms, which can result in two coexisting resistance
                      hystereses that have opposite voltage polarity. These
                      competing processes can be defined as regular and anomalous
                      resistive switching. Despite significant characterization
                      efforts, the complex nanoscale redox processes that drive
                      anomalous resistive switching and their implications for
                      current transport remain poorly understood. Here, lateral
                      and vertical mapping of O vacancy concentrations is used
                      during the operation of such devices in situ in an
                      aberration corrected transmission electron microscope to
                      explain the anomalous switching mechanism. It is found that
                      an increase (decrease) in the overall O vacancy
                      concentration within the device after positive (negative)
                      biasing of the Schottky-type electrode is associated with
                      the electrocatalytic release and reincorporation of oxygen
                      at the electrode/oxide interface and is responsible for the
                      resistance change. This fundamental insight presents a novel
                      perspective on resistive switching processes and opens up
                      new technological opportunities for the implementation of
                      memristive devices, as anomalous switching can now be
                      suppressed selectively or used deliberately to achieve the
                      desirable so-called deep Reset.},
      cin          = {PGI-7 / PGI-5 / ER-C-1},
      ddc          = {540},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-5-20110106 /
                      I:(DE-Juel1)ER-C-1-20170209},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000403280600028},
      pubmed       = {pmid:28417593},
      doi          = {10.1002/adma.201700212},
      url          = {https://juser.fz-juelich.de/record/837188},
}