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@ARTICLE{Yang:837218,
      author       = {Yang, Yuchao and Takahashi, Yasuo and Tsurumaki-Fukuchi,
                      Atsushi and Arita, Masashi and Moors, M. and Buckwell, M.
                      and Mehonic, A. and Kenyon, A. J.},
      title        = {{P}robing electrochemistry at the nanoscale: in situ {TEM}
                      and {STM} characterizations of conducting filaments in
                      memristive devices},
      journal      = {Journal of electroceramics},
      volume       = {39},
      number       = {1-4},
      issn         = {1573-8663},
      address      = {Dordrecht [u.a.]},
      publisher    = {Springer Science + Business Media B.V},
      reportid     = {FZJ-2017-06193},
      pages        = {73–93},
      year         = {2017},
      abstract     = {Memristors or memristive devices are two-terminal nanoionic
                      systems whose resistance switching effects are induced by
                      ion transport and redox reactions in confined spaces down to
                      nanometer or even atomic scales. Understanding such
                      localized and inhomogeneous electrochemical processes is a
                      challenging but crucial task for continued applications of
                      memristors in nonvolatile memory, reconfigurable logic, and
                      brain inspired computing. Here we give a survey for two of
                      the most powerful technologies that are capable of probing
                      the resistance switching mechanisms at the nanoscale –
                      transmission electron microscopy, especially in situ, and
                      scanning tunneling microscopy, for memristive systems based
                      on both electrochemical metallization and valence changes.
                      These studies yield rich information about the size,
                      morphology, composition, chemical state and
                      growth/dissolution dynamics of conducting filaments and even
                      individual metal nanoclusters, and have greatly facilitated
                      the understanding of the underlying mechanisms of memristive
                      switching. Further characterization of cyclic operations
                      leads to additional insights into the degradation in
                      performance, which is important for continued device
                      optimization towards practical applications.},
      cin          = {PGI-7},
      ddc          = {620},
      cid          = {I:(DE-Juel1)PGI-7-20110106},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000419361600006},
      doi          = {10.1007/s10832-017-0069-y},
      url          = {https://juser.fz-juelich.de/record/837218},
}