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@ARTICLE{Richter:837584,
      author       = {Richter, Alexei and Smirnov, Vladimir and Lambertz, Andreas
                      and Nomoto, Keita and Welter, Katharina and Ding, Kaining},
      title        = {{V}ersatility of doped nanocrystalline silicon oxide for
                      applications in silicon thin-film and heterojunction solar
                      cells},
      journal      = {Solar energy materials $\&$ solar cells},
      volume       = {174},
      issn         = {0927-0248},
      address      = {Amsterdam [u.a.]},
      publisher    = {NH, Elsevier},
      reportid     = {FZJ-2017-06467},
      pages        = {196 - 201},
      year         = {2018},
      abstract     = {To optimize the optical response of a solar cell,
                      specifically designed materials with appropriate
                      optoelectronic properties are needed. Owing to the unique
                      microstructure of doped nanocrystalline silicon oxide,
                      nc-SiOx:H, this material is able to cover an extensive range
                      of optical and electrical properties. However, applying
                      nc-SiOx:H thin-films in photovoltaic devices necessitates an
                      individual adaptation of the material properties according
                      to the specific functions in the device. In this study, we
                      investigated the detailed microstructure of doped nc-SiOx:H
                      films via atom probe tomography at the sub-nm scale,
                      thereby, for the first time, revealing the three-dimensional
                      distribution of the nc-Si network. Furthermore, n- and
                      p-type nc-SiOx:H layers with various optical and electrical
                      properties were implemented as a window, back contact, and
                      an intermediate reflector layer in silicon heterojunction
                      and multi-junction thin-film solar cells with a focus on the
                      key aspects for adapting the material properties to the
                      specific functions. Here, nc-SiOx:H effectively reduced the
                      parasitic absorption and opened new possibilities for the
                      photon management in the solar cells, thereby, demonstrating
                      the versatility of this material. Remarkably, using our
                      adapted nc-SiOx:H layers in distinct functions enabled us to
                      achieve a combined short circuit current density of 15.1 mA
                      cm−2 for the two a-Si:H sub-cells in an
                      a-Si:H/a-Si:H/µc-Si:H triple-junction thin-film solar cell
                      and an active area efficiency of $21.4\%$ was realized for a
                      silicon heterojunction solar cell.},
      cin          = {IEK-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)IEK-5-20101013},
      pnm          = {121 - Solar cells of the next generation (POF3-121)},
      pid          = {G:(DE-HGF)POF3-121},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000415392500023},
      doi          = {10.1016/j.solmat.2017.08.035},
      url          = {https://juser.fz-juelich.de/record/837584},
}