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000837620 005__ 20210129231404.0
000837620 037__ $$aFZJ-2017-06499
000837620 041__ $$aEnglish
000837620 1001_ $$0P:(DE-Juel1)128634$$aSchäpers, Thomas$$b0$$eCorresponding author
000837620 1112_ $$aFrontiers in Material Sciences$$cGreifswald$$d2017-09-04 - 2017-09-06$$wGermany
000837620 245__ $$aInAs Nanowire-Based Devices for Applications in Quantum Information Technology
000837620 260__ $$c2017
000837620 3367_ $$033$$2EndNote$$aConference Paper
000837620 3367_ $$2DataCite$$aOther
000837620 3367_ $$2BibTeX$$aINPROCEEDINGS
000837620 3367_ $$2DRIVER$$aconferenceObject
000837620 3367_ $$2ORCID$$aLECTURE_SPEECH
000837620 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1505817599_21751$$xInvited
000837620 520__ $$aInAs nanowires are not only interesting as building blocks for future nanoelectronic device applications they are also very promising candidates for realizing circuits for quantum information processing. Here, two major directions can be identified. First, InAs nanowires can be employed to create Majorana fermions for robust topological quantum computing. One essential prerequisite is the verification of spin helical transport. In quantum point contacts based on InAs nanowires we achieved ballistic transport with quantized conductance. At the last step a dip feature is observed which is attributed to the presence of helical states. The emergence of this dip feature is explained in the framework of exchange interactions. As a second option InAs nanowires are also interesting for gate-controlled Josephson junctions in transmon qubits. In order to optimize the junction performance, the InAs nanowire is covered in-situ by a superconducting Al or Nb shell. These junctions are subsequently integrated in a superconducting resonator circuit.
000837620 536__ $$0G:(DE-HGF)POF3-522$$a522 - Controlling Spin-Based Phenomena (POF3-522)$$cPOF3-522$$fPOF III$$x0
000837620 909CO $$ooai:juser.fz-juelich.de:837620$$pVDB
000837620 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128634$$aForschungszentrum Jülich$$b0$$kFZJ
000837620 9131_ $$0G:(DE-HGF)POF3-522$$1G:(DE-HGF)POF3-520$$2G:(DE-HGF)POF3-500$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bKey Technologies$$lFuture Information Technology - Fundamentals, Novel Concepts and Energy Efficiency (FIT)$$vControlling Spin-Based Phenomena$$x0
000837620 9141_ $$y2017
000837620 920__ $$lyes
000837620 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
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