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@ARTICLE{Funck:837635,
      author       = {Funck, Carsten and Hoffmann-Eifert, Susanne and Lukas,
                      Sebastian and Waser, R. and Menzel, Stephan},
      title        = {{D}esign rules for threshold switches based on a field
                      triggered thermal runaway mechanism},
      journal      = {Journal of computational electronics},
      volume       = {16},
      number       = {4},
      issn         = {1572-8137},
      address      = {Dordrecht},
      publisher    = {Springer Science + Business Media B.V.},
      reportid     = {FZJ-2017-06514},
      pages        = {1175–1185},
      year         = {2017},
      abstract     = {We investigate a new type of threshold switching devices,
                      which is based on a purely electronic phenomena. These
                      threshold switches are polarity independent and switch
                      abruptly from a high resistive state to a low resistive
                      state at a threshold voltage. The device stays in this low
                      resistive state as long as a high voltage drops over the
                      device. When the voltage is reduced, the low resistive state
                      is lost and the device switches back to the initial high
                      resistive state. This makes these threshold switches highly
                      interesting as selector elements for resistive switching
                      memory concepts, based on device arrays, which are the
                      prerequisite for new applications like logic-in-memory
                      concepts. The threshold switching considered here is based
                      on a combination of a Poole–Frenkel conduction mechanism
                      and Joule heating. Hence, it is not strongly restricted to
                      specific materials rather it is connected to the physical
                      quantities of the Poole–Frenkel conduction mechanism and
                      the thermal conductance. This enables to design the
                      threshold switch to its application requirements by
                      adjusting the relevant physical material properties or
                      designing the device geometry. Here we present a theoretical
                      study, which tackles the influence of several material
                      properties and the device design. From this simulation model
                      the impact on technical important figures of merits is
                      determined, such as the threshold switching voltage and the
                      selectivity.},
      cin          = {PGI-7 / JARA-FIT},
      ddc          = {004},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000417598100017},
      doi          = {10.1007/s10825-017-1061-0},
      url          = {https://juser.fz-juelich.de/record/837635},
}