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@INPROCEEDINGS{Hensling:837643,
      author       = {Hensling, Felix and Raab, Nicolas and Bäumer, Christoph
                      and Dittmann, Regina},
      title        = {{T}ailoring the switching performance of resistive
                      switching {S}r{T}i{O}3 devices by {S}r{O} interlayer
                      engineering},
      reportid     = {FZJ-2017-06521},
      year         = {2017},
      month         = {Sep},
      date          = {2017-09-25},
      organization  = {Int. Workshop on Oxide Electronics,
                       Chicago (USA), 25 Sep 2017 - 29 Sep
                       2017},
      subtyp        = {Other},
      cin          = {PGI-7 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / $I:(DE-82)080009_20140620$},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/837643},
}