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@INPROCEEDINGS{Hardtdegen:837648,
      author       = {Hardtdegen, Alexander and Zhang, Hehe and Hoffmann-Eifert,
                      Susanne},
      title        = {{C}omparison of plasma-enhanced and thermal atomic layer
                      deposited {T}i{O}2 for the integration into
                      {H}f{O}2/{T}i{O}2-based resistive switching devices},
      reportid     = {FZJ-2017-06526},
      year         = {2017},
      month         = {Sep},
      date          = {2017-09-18},
      organization  = {European Materials Research Meeting,
                       Warsaw (Poland), 18 Sep 2017 - 22 Sep
                       2017},
      subtyp        = {Other},
      cin          = {PGI-7 / PGI-10 / JARA-FIT},
      cid          = {I:(DE-Juel1)PGI-7-20110106 / I:(DE-Juel1)PGI-10-20170113 /
                      $I:(DE-82)080009_20140620$},
      pnm          = {524 - Controlling Collective States (POF3-524)},
      pid          = {G:(DE-HGF)POF3-524},
      typ          = {PUB:(DE-HGF)24},
      url          = {https://juser.fz-juelich.de/record/837648},
}