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| Hauptseite > Publikationsdatenbank > Comparison of plasma-enhanced and thermal atomic layer deposited TiO2 for the integration into HfO2/TiO2-based resistive switching devices > print |
| Hauptseite > Publikationsdatenbank > Comparison of plasma-enhanced and thermal atomic layer deposited TiO2 for the integration into HfO2/TiO2-based resistive switching devices > print |
| 001 | 837648 | ||
| 005 | 20210129231417.0 | ||
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| 100 | 1 | _ | |a Hardtdegen, Alexander |0 P:(DE-Juel1)165704 |b 0 |u fzj |
| 111 | 2 | _ | |a European Materials Research Meeting |g EMRS |c Warsaw |d 2017-09-18 - 2017-09-22 |w Poland |
| 245 | _ | _ | |a Comparison of plasma-enhanced and thermal atomic layer deposited TiO2 for the integration into HfO2/TiO2-based resistive switching devices |
| 260 | _ | _ | |c 2017 |
| 336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
| 336 | 7 | _ | |a INPROCEEDINGS |2 BibTeX |
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