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@ARTICLE{Rucavado:837849,
      author       = {Rucavado, Esteban and Jeangros, Quentin and Urban, Daniel
                      F. and Holovský, Jakub and Remes, Zdenek and Duchamp,
                      Martial and Landucci, Federica and Dunin-Borkowski, Rafal
                      and Körner, Wolfgang and Elsässer, Christian and
                      Hessler-Wyser, Aïcha and Morales-Masis, Monica and Ballif,
                      Christophe},
      title        = {{E}nhancing the optoelectronic properties of amorphous zinc
                      tin oxide by subgap defect passivation: {A} theoretical and
                      experimental demonstration},
      journal      = {Physical review / B},
      volume       = {95},
      number       = {24},
      issn         = {2469-9950},
      address      = {Woodbury, NY},
      publisher    = {Inst.},
      reportid     = {FZJ-2017-06626},
      pages        = {245204},
      year         = {2017},
      abstract     = {The link between sub-bandgap states and optoelectronic
                      properties is investigated for amorphous zinc tin oxide
                      (a-ZTO) thin films deposited by RF sputtering. a-ZTO samples
                      were annealed up to 500 °C in oxidizing, neutral, and
                      reducing atmospheres before characterizing their structural
                      and optoelectronic properties by photothermal deflection
                      spectroscopy, near-infrared-visible UV spectrophotometry,
                      Hall effect, Rutherford backscattering, hydrogen forward
                      scattering and transmission electron microscopy. By
                      combining the experimental results with density functional
                      theory calculations, oxygen deficiencies and resulting metal
                      atoms clusters are identified as the source of subgap
                      states, some of which act as electron donors but also as
                      free electron scattering centers. The role of hydrogen on
                      the optoelectronic properties is also discussed. Based on
                      this detailed understanding of the different point defects
                      present in a-ZTO, their impact on optoelectronic properties,
                      and how they can be suppressed by postdeposition annealing
                      treatments, an amorphous indium-free transparent conductive
                      oxide, with a high thermal stability and an electron
                      mobility up to 35cm2V−1s−1, is demonstrated by defect
                      passivation.},
      cin          = {ER-C-1 / PGI-5},
      ddc          = {530},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000402973800004},
      doi          = {10.1103/PhysRevB.95.245204},
      url          = {https://juser.fz-juelich.de/record/837849},
}