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@ARTICLE{Massabuau:837852,
      author       = {Massabuau, Fabien C. P. and Rhode, Sneha L. and Horton,
                      Matthew K. and Hanlon, Thomas J. and Kovacs, Andras and
                      Zielinski, Marcin S. and Kappers, Menno J. and
                      Dunin-Borkowski, Rafal and Humphreys, Colin J.},
      title        = {{D}islocations in {A}l{G}a{N}: {C}ore {S}tructure, {A}tom
                      {S}egregation and {O}ptical {P}roperties},
      journal      = {Nano letters},
      volume       = {17},
      number       = {8},
      issn         = {1530-6984},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2017-06629},
      pages        = {4846 - 4852},
      year         = {2017},
      abstract     = {We conducted a comprehensive investigation of dislocations
                      in Al0.46Ga0.54N. Using aberration-corrected scanning
                      transmission electron microscopy and energy dispersive X-ray
                      spectroscopy, the atomic structure and atom distribution at
                      the dislocation core have been examined. We report that the
                      core configuration of dislocations in AlGaN is consistent
                      with that of other materials in the III-Nitride system.
                      However, we observed that the dissociation of mixed-type
                      dislocations is impeded by alloying GaN with AlN, which is
                      confirmed by our experimental observation of Ga and Al atom
                      segregation in the tensile and compressive parts of the
                      dislocations, respectively. Investigation of the optical
                      properties of the dislocations shows that the atom
                      segregation at dislocations has no significant effect on the
                      intensity recorded by cathodoluminescence in the vicinity of
                      the dislocations. These results are in contrast with the
                      case of dislocations in In0.09Ga0.91N where segregation of
                      In and Ga atoms also occurs but results in carrier
                      localization limiting non-radiative recombination at the
                      dislocation. This study therefore sheds light on why
                      InGaN-based devices are generally more resilient to
                      dislocations than their AlGaN-based counterparts.},
      cin          = {ER-C-1 / PGI-5},
      ddc          = {540},
      cid          = {I:(DE-Juel1)ER-C-1-20170209 / I:(DE-Juel1)PGI-5-20110106},
      pnm          = {143 - Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000407540300043},
      pubmed       = {pmid:28707893},
      doi          = {10.1021/acs.nanolett.7b01697},
      url          = {https://juser.fz-juelich.de/record/837852},
}