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@ARTICLE{Gehlmann:837865,
      author       = {Gehlmann, Mathias and Aguilera, Irene and Bihlmayer, Gustav
                      and Nemšák, Slavomír and Nagler, Philipp and Gospodarič,
                      Pika and Zamborlini, Giovanni and Eschbach, Markus and
                      Feyer, Vitaliy and Kronast, Florian and Młyńczak, Ewa and
                      Korn, Tobias and Plucinski, Lukasz and Schüller, Christian
                      and Blügel, Stefan and Schneider, Claus M.},
      title        = {{D}irect {O}bservation of the {B}and {G}ap {T}ransition in
                      {A}tomically {T}hin {R}e{S}2},
      journal      = {Nano letters},
      volume       = {17},
      number       = {9},
      issn         = {1530-6992},
      address      = {Washington, DC},
      publisher    = {ACS Publ.},
      reportid     = {FZJ-2017-06642},
      pages        = {5187 - 5192},
      year         = {2017},
      abstract     = {ReS2 is considered as a promising candidate for novel
                      electronic and sensor applications. The low crystal symmetry
                      of this van der Waals compound leads to a highly anisotropic
                      optical, vibrational, and transport behavior. However, the
                      details of the electronic band structure of this fascinating
                      material are still largely unexplored. We present a
                      momentum-resolved study of the electronic structure of
                      monolayer, bilayer, and bulk ReS2 using k-space
                      photoemission microscopy in combination with
                      first-principles calculations. We demonstrate that the
                      valence electrons in bulk ReS2 are—contrary to assumptions
                      in recent literature—significantly delocalized across the
                      van der Waals gap. Furthermore, we directly observe the
                      evolution of the valence band dispersion as a function of
                      the number of layers, revealing the transition from an
                      indirect band gap in bulk ReS2 to a direct gap in the
                      bilayer and the monolayer. We also find a significantly
                      increased effective hole mass in single-layer crystals. Our
                      results establish bilayer ReS2 as an advantageous building
                      block for two-dimensional devices and van der Waals
                      heterostructures.},
      cin          = {IAS-1 / PGI-1 / JARA-FIT / JARA-HPC / PGI-6},
      ddc          = {540},
      cid          = {I:(DE-Juel1)IAS-1-20090406 / I:(DE-Juel1)PGI-1-20110106 /
                      $I:(DE-82)080009_20140620$ / $I:(DE-82)080012_20140620$ /
                      I:(DE-Juel1)PGI-6-20110106},
      pnm          = {142 - Controlling Spin-Based Phenomena (POF3-142) / 143 -
                      Controlling Configuration-Based Phenomena (POF3-143)},
      pid          = {G:(DE-HGF)POF3-142 / G:(DE-HGF)POF3-143},
      typ          = {PUB:(DE-HGF)16},
      UT           = {WOS:000411043500002},
      pubmed       = {pmid:28759250},
      doi          = {10.1021/acs.nanolett.7b00627},
      url          = {https://juser.fz-juelich.de/record/837865},
}