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Conference Presentation (Invited) FZJ-2017-06656
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Modelling of Resistive Switching Devices based on the Valence Change Mechanism

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2017

Non-volatile Memory Technology Symposium, NVMTS, AachenAachen, Germany, 30 Aug 2017 - 1 Sep 20172017-08-302017-09-01

Contributing Institute(s):
  1. Elektronische Materialien (PGI-7)
  2. JARA-FIT (JARA-FIT)
Research Program(s):
  1. 521 - Controlling Electron Charge-Based Phenomena (POF3-521) (POF3-521)

Appears in the scientific report 2017
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The record appears in these collections:
Document types > Presentations > Conference Presentations
JARA > JARA > JARA-JARA\-FIT
Institute Collections > PGI > PGI-7
Workflow collections > Public records
Publications database
 Record created 2017-09-20, last modified 2021-01-29
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