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@MASTERSTHESIS{ArumugamGurunathan:837893,
      author       = {Arumugam Gurunathan, Dinesh Kumar},
      othercontributors = {Lepsa, Mihail Ion},
      title        = {{III}-{V} core-shell nanowires for low power electronic
                      devices},
      school       = {Technische Universität Dresden},
      type         = {MS},
      address      = {Jülich},
      publisher    = {Forschungszentrum},
      reportid     = {FZJ-2017-06664},
      pages        = {77 p.},
      year         = {2017},
      note         = {Technische Universität Dresden, Masterarbeit, 2017},
      abstract     = {The InAs/GaSb core-shell nanowires (NWs) are of particular
                      interest due to the broken gap or type III band alignment
                      which makes them an ideal candidate for tunnelling devices.
                      This work investigates the growth, morphological, structural
                      and electrical characterization of InAs/GaSb NWs grown
                      selectively by molecular beam epitaxy (MBE) on pre-patterned
                      SiO2/Si.A first part of the thesis is devoted to substrate
                      preparation for selective area growth of InAs NWs. The
                      substrate preparation is a critical process in selective
                      area MBE growth. In this thesis work, substrate preparation
                      for selective growth of InAs nanowires is optimized. Then,
                      our growth investigations result in the finding of suitable
                      growth parameters of InAs and InAs/GaSb NWs grown on
                      pre-patterned substrates. The influence of pitch (inter-wire
                      distance) and hole diameter on the InAs NW growth is also
                      discussed. In the case of InAs/GaSb core-shell nanowire
                      growth, the effect of the shell growth temperature and
                      doping of GaSb shell are examined. The morphology of InAs
                      and InAs/GaS NWs, as well as the crystal structure of the
                      InAs/GaSb NWs, are investigated using SEM, STEM/EDX and
                      HR-TEM measurements. The STEM/EDX and HR-TEM measurements
                      are accomplished by cooperation with other groups. The
                      results show negligible dislocations at the core-shell
                      interface indicating the almost lattice matched InAs/GaSb NW
                      heterostructure. Also, defects like stacking faults and
                      twinning are observed at the top of the GaSb shell.The
                      second part of the work is focused on the InAs/GaSb nanowire
                      device fabrication and its electrical characterization. The
                      problems faced during selective etching of GaSb shell for
                      contacting InAs core give an insight about the difficulty in
                      establishing contacts for core and shell separately in
                      InAs/GaSb radial NWs. Contacting GaSb shell is a challenging
                      process because the GaSb shell is easily oxidizing and
                      dissolves by reacting with metal contacts. So, careful
                      attempts are made to contact GaSb shell with Nb/Au using
                      those NWs for electrical characterization. The room
                      temperature electrical characterization presents the impact
                      of the shell doping on current-voltage characteristics in
                      combination with the back gate voltage. The preliminary
                      results of the electrical measurements are analyzed. The
                      doped GaSb shell in InAs/GaSb NWs exhibited a linear (ohmic)
                      characteristics independent of gate voltage control, while
                      non-doped shell showed the dependency on the back gate
                      voltage.},
      cin          = {PGI-9 / PGI-10},
      cid          = {I:(DE-Juel1)PGI-9-20110106 / I:(DE-Juel1)PGI-10-20170113},
      pnm          = {521 - Controlling Electron Charge-Based Phenomena
                      (POF3-521)},
      pid          = {G:(DE-HGF)POF3-521},
      typ          = {PUB:(DE-HGF)19},
      url          = {https://juser.fz-juelich.de/record/837893},
}