%0 Conference Paper
%A Glass, Stefan
%A von den Driesch, Nils
%A Strangio, Sebastiano
%A Schulte-Braucks, Christian
%A Rieger, Torsten
%A Buca, Dan Mihai
%A Mantl, Siegfried
%A Zhao, Qing-Tai
%T Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing
%M FZJ-2017-06752
%D 2017
%X In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained.
%B 2017 International Conference on Solid State Devices and Materials
%C 19 Sep 2017 - 22 Sep 2017, Sendai (Japan)
Y2 19 Sep 2017 - 22 Sep 2017
M2 Sendai, Japan
%F PUB:(DE-HGF)6
%9 Conference Presentation
%U https://juser.fz-juelich.de/record/838004