000838004 001__ 838004
000838004 005__ 20210129231455.0
000838004 0247_ $$2Handle$$a2128/15365
000838004 037__ $$aFZJ-2017-06752
000838004 041__ $$aEnglish
000838004 1001_ $$0P:(DE-Juel1)165997$$aGlass, Stefan$$b0$$eCorresponding author
000838004 1112_ $$a2017 International Conference on Solid State Devices and Materials$$cSendai$$d2017-09-19 - 2017-09-22$$gSSDM$$wJapan
000838004 245__ $$aInvestigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing
000838004 260__ $$c2017
000838004 3367_ $$033$$2EndNote$$aConference Paper
000838004 3367_ $$2DataCite$$aOther
000838004 3367_ $$2BibTeX$$aINPROCEEDINGS
000838004 3367_ $$2DRIVER$$aconferenceObject
000838004 3367_ $$2ORCID$$aLECTURE_SPEECH
000838004 3367_ $$0PUB:(DE-HGF)6$$2PUB:(DE-HGF)$$aConference Presentation$$bconf$$mconf$$s1506584404_21623$$xAfter Call
000838004 520__ $$aIn this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained.
000838004 536__ $$0G:(EU-Grant)619509$$aE2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)$$c619509$$fFP7-ICT-2013-11$$x0
000838004 536__ $$0G:(DE-HGF)POF3-899$$a899 - ohne Topic (POF3-899)$$cPOF3-899$$fPOF III$$x1
000838004 7001_ $$0P:(DE-Juel1)161247$$avon den Driesch, Nils$$b1
000838004 7001_ $$0P:(DE-HGF)0$$aStrangio, Sebastiano$$b2
000838004 7001_ $$0P:(DE-Juel1)161530$$aSchulte-Braucks, Christian$$b3
000838004 7001_ $$0P:(DE-Juel1)141766$$aRieger, Torsten$$b4
000838004 7001_ $$0P:(DE-Juel1)125569$$aBuca, Dan Mihai$$b5
000838004 7001_ $$0P:(DE-Juel1)128609$$aMantl, Siegfried$$b6
000838004 7001_ $$0P:(DE-Juel1)128649$$aZhao, Qing-Tai$$b7
000838004 8564_ $$uhttps://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.pdf$$yOpenAccess
000838004 8564_ $$uhttps://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.gif?subformat=icon$$xicon$$yOpenAccess
000838004 8564_ $$uhttps://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.jpg?subformat=icon-1440$$xicon-1440$$yOpenAccess
000838004 8564_ $$uhttps://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.jpg?subformat=icon-180$$xicon-180$$yOpenAccess
000838004 8564_ $$uhttps://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.jpg?subformat=icon-640$$xicon-640$$yOpenAccess
000838004 8564_ $$uhttps://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.pdf?subformat=pdfa$$xpdfa$$yOpenAccess
000838004 909CO $$ooai:juser.fz-juelich.de:838004$$pec_fundedresources$$pVDB$$pdriver$$popen_access$$popenaire
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)165997$$aForschungszentrum Jülich$$b0$$kFZJ
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161247$$aForschungszentrum Jülich$$b1$$kFZJ
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)161530$$aForschungszentrum Jülich$$b3$$kFZJ
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)141766$$aForschungszentrum Jülich$$b4$$kFZJ
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)125569$$aForschungszentrum Jülich$$b5$$kFZJ
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128609$$aForschungszentrum Jülich$$b6$$kFZJ
000838004 9101_ $$0I:(DE-588b)5008462-8$$6P:(DE-Juel1)128649$$aForschungszentrum Jülich$$b7$$kFZJ
000838004 9131_ $$0G:(DE-HGF)POF3-899$$1G:(DE-HGF)POF3-890$$2G:(DE-HGF)POF3-800$$3G:(DE-HGF)POF3$$4G:(DE-HGF)POF$$aDE-HGF$$bProgrammungebundene Forschung$$lohne Programm$$vohne Topic$$x0
000838004 9141_ $$y2017
000838004 915__ $$0StatID:(DE-HGF)0510$$2StatID$$aOpenAccess
000838004 920__ $$lyes
000838004 9201_ $$0I:(DE-Juel1)PGI-9-20110106$$kPGI-9$$lHalbleiter-Nanoelektronik$$x0
000838004 980__ $$aconf
000838004 980__ $$aVDB
000838004 980__ $$aUNRESTRICTED
000838004 980__ $$aI:(DE-Juel1)PGI-9-20110106
000838004 9801_ $$aFullTexts