TY  - CONF
AU  - Glass, Stefan
AU  - von den Driesch, Nils
AU  - Strangio, Sebastiano
AU  - Schulte-Braucks, Christian
AU  - Rieger, Torsten
AU  - Buca, Dan Mihai
AU  - Mantl, Siegfried
AU  - Zhao, Qing-Tai
TI  - Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing
M1  - FZJ-2017-06752
PY  - 2017
AB  - In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained.
T2  - 2017 International Conference on Solid State Devices and Materials
CY  - 19 Sep 2017 - 22 Sep 2017, Sendai (Japan)
Y2  - 19 Sep 2017 - 22 Sep 2017
M2  - Sendai, Japan
LB  - PUB:(DE-HGF)6
UR  - https://juser.fz-juelich.de/record/838004
ER  -