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@INPROCEEDINGS{Glass:838004,
author = {Glass, Stefan and von den Driesch, Nils and Strangio,
Sebastiano and Schulte-Braucks, Christian and Rieger,
Torsten and Buca, Dan Mihai and Mantl, Siegfried and Zhao,
Qing-Tai},
title = {{I}nvestigation of {TFET}s with {V}ertical {T}unneling
{P}ath for {L}ow {A}verage {S}ubthreshold {S}wing},
reportid = {FZJ-2017-06752},
year = {2017},
abstract = {In this paper we analyze the capabilities in terms of
average subthreshold swing and on-current of Si0.50Ge0.50/Si
heterostructure n-TFETs with vertical tunneling path,
utilizing an air bridge design to minimize source-drain
leakage. We show that the on-current is line tunneling
dominated and proportional to the source-gate overlap area.
In order to obtain a low average subthreshold swing the
onsets of diagonal point tunneling and line tunneling have
to be merged closely, which is best achieved with a moderate
counter doping in the channel. As a result average slopes of
87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger
than 106 are obtained.},
month = {Sep},
date = {2017-09-19},
organization = {2017 International Conference on Solid
State Devices and Materials, Sendai
(Japan), 19 Sep 2017 - 22 Sep 2017},
subtyp = {After Call},
cin = {PGI-9},
cid = {I:(DE-Juel1)PGI-9-20110106},
pnm = {E2SWITCH - Energy Efficient Tunnel FET Switches and
Circuits (619509) / 899 - ohne Topic (POF3-899)},
pid = {G:(EU-Grant)619509 / G:(DE-HGF)POF3-899},
typ = {PUB:(DE-HGF)6},
url = {https://juser.fz-juelich.de/record/838004},
}