001     838004
005     20210129231455.0
024 7 _ |a 2128/15365
|2 Handle
037 _ _ |a FZJ-2017-06752
041 _ _ |a English
100 1 _ |a Glass, Stefan
|0 P:(DE-Juel1)165997
|b 0
|e Corresponding author
111 2 _ |a 2017 International Conference on Solid State Devices and Materials
|g SSDM
|c Sendai
|d 2017-09-19 - 2017-09-22
|w Japan
245 _ _ |a Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing
260 _ _ |c 2017
336 7 _ |a Conference Paper
|0 33
|2 EndNote
336 7 _ |a Other
|2 DataCite
336 7 _ |a INPROCEEDINGS
|2 BibTeX
336 7 _ |a conferenceObject
|2 DRIVER
336 7 _ |a LECTURE_SPEECH
|2 ORCID
336 7 _ |a Conference Presentation
|b conf
|m conf
|0 PUB:(DE-HGF)6
|s 1506584404_21623
|2 PUB:(DE-HGF)
|x After Call
520 _ _ |a In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained.
536 _ _ |a E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509)
|0 G:(EU-Grant)619509
|c 619509
|f FP7-ICT-2013-11
|x 0
536 _ _ |a 899 - ohne Topic (POF3-899)
|0 G:(DE-HGF)POF3-899
|c POF3-899
|f POF III
|x 1
700 1 _ |a von den Driesch, Nils
|0 P:(DE-Juel1)161247
|b 1
700 1 _ |a Strangio, Sebastiano
|0 P:(DE-HGF)0
|b 2
700 1 _ |a Schulte-Braucks, Christian
|0 P:(DE-Juel1)161530
|b 3
700 1 _ |a Rieger, Torsten
|0 P:(DE-Juel1)141766
|b 4
700 1 _ |a Buca, Dan Mihai
|0 P:(DE-Juel1)125569
|b 5
700 1 _ |a Mantl, Siegfried
|0 P:(DE-Juel1)128609
|b 6
700 1 _ |a Zhao, Qing-Tai
|0 P:(DE-Juel1)128649
|b 7
856 4 _ |y OpenAccess
|u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.pdf
856 4 _ |y OpenAccess
|x icon
|u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.gif?subformat=icon
856 4 _ |y OpenAccess
|x icon-1440
|u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.jpg?subformat=icon-1440
856 4 _ |y OpenAccess
|x icon-180
|u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.jpg?subformat=icon-180
856 4 _ |y OpenAccess
|x icon-640
|u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.jpg?subformat=icon-640
856 4 _ |y OpenAccess
|x pdfa
|u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.pdf?subformat=pdfa
909 C O |o oai:juser.fz-juelich.de:838004
|p openaire
|p open_access
|p driver
|p VDB
|p ec_fundedresources
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 0
|6 P:(DE-Juel1)165997
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 1
|6 P:(DE-Juel1)161247
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 3
|6 P:(DE-Juel1)161530
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 4
|6 P:(DE-Juel1)141766
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 5
|6 P:(DE-Juel1)125569
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 6
|6 P:(DE-Juel1)128609
910 1 _ |a Forschungszentrum Jülich
|0 I:(DE-588b)5008462-8
|k FZJ
|b 7
|6 P:(DE-Juel1)128649
913 1 _ |a DE-HGF
|b Programmungebundene Forschung
|l ohne Programm
|1 G:(DE-HGF)POF3-890
|0 G:(DE-HGF)POF3-899
|2 G:(DE-HGF)POF3-800
|v ohne Topic
|x 0
|4 G:(DE-HGF)POF
|3 G:(DE-HGF)POF3
914 1 _ |y 2017
915 _ _ |a OpenAccess
|0 StatID:(DE-HGF)0510
|2 StatID
920 _ _ |l yes
920 1 _ |0 I:(DE-Juel1)PGI-9-20110106
|k PGI-9
|l Halbleiter-Nanoelektronik
|x 0
980 _ _ |a conf
980 _ _ |a VDB
980 _ _ |a UNRESTRICTED
980 _ _ |a I:(DE-Juel1)PGI-9-20110106
980 1 _ |a FullTexts


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