Hauptseite > Publikationsdatenbank > Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing > print |
001 | 838004 | ||
005 | 20210129231455.0 | ||
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041 | _ | _ | |a English |
100 | 1 | _ | |a Glass, Stefan |0 P:(DE-Juel1)165997 |b 0 |e Corresponding author |
111 | 2 | _ | |a 2017 International Conference on Solid State Devices and Materials |g SSDM |c Sendai |d 2017-09-19 - 2017-09-22 |w Japan |
245 | _ | _ | |a Investigation of TFETs with Vertical Tunneling Path for Low Average Subthreshold Swing |
260 | _ | _ | |c 2017 |
336 | 7 | _ | |a Conference Paper |0 33 |2 EndNote |
336 | 7 | _ | |a Other |2 DataCite |
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520 | _ | _ | |a In this paper we analyze the capabilities in terms of average subthreshold swing and on-current of Si0.50Ge0.50/Si heterostructure n-TFETs with vertical tunneling path, utilizing an air bridge design to minimize source-drain leakage. We show that the on-current is line tunneling dominated and proportional to the source-gate overlap area. In order to obtain a low average subthreshold swing the onsets of diagonal point tunneling and line tunneling have to be merged closely, which is best achieved with a moderate counter doping in the channel. As a result average slopes of 87 mV/dec over 4 decades of Id and Ion/Ioff ratios of larger than 106 are obtained. |
536 | _ | _ | |a E2SWITCH - Energy Efficient Tunnel FET Switches and Circuits (619509) |0 G:(EU-Grant)619509 |c 619509 |f FP7-ICT-2013-11 |x 0 |
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700 | 1 | _ | |a von den Driesch, Nils |0 P:(DE-Juel1)161247 |b 1 |
700 | 1 | _ | |a Strangio, Sebastiano |0 P:(DE-HGF)0 |b 2 |
700 | 1 | _ | |a Schulte-Braucks, Christian |0 P:(DE-Juel1)161530 |b 3 |
700 | 1 | _ | |a Rieger, Torsten |0 P:(DE-Juel1)141766 |b 4 |
700 | 1 | _ | |a Buca, Dan Mihai |0 P:(DE-Juel1)125569 |b 5 |
700 | 1 | _ | |a Mantl, Siegfried |0 P:(DE-Juel1)128609 |b 6 |
700 | 1 | _ | |a Zhao, Qing-Tai |0 P:(DE-Juel1)128649 |b 7 |
856 | 4 | _ | |y OpenAccess |u https://juser.fz-juelich.de/record/838004/files/Abstract_SSDM2017_SGlass.pdf |
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